• 제목/요약/키워드: Independent Film

검색결과 234건 처리시간 0.023초

Modification of the Condensation Heat Transfer Model of RELAP5/MOD3.1 for the simulation of Secondary Condensers

  • Kim, Hyoung-Tae;No, Hee-Cheon;Park, Sang-Doug;Kim, Hyeong-Taek
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 1996년도 춘계학술발표회논문집(2)
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    • pp.88-94
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    • 1996
  • The dependence of the node size in the condensation heat transfer coefficient for an inclined surface is eliminated and two correlations applicable for laminar and turbulent regimes are implemented in RELAP5/MOD3.1. The newly implemented correlations are used according to their applicable ranges of the film Reynolds numbers Reps which are calculated recursively to track the condensate film thickness along the condensation length. The modified version is compared with the original one through comparison with an analytical solution and the simulation of the Secondary Condensers (SC). It turns out that the simulation results by this modified version are independent of the node size and are better agreement with the analytical solution than those by the original one.

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저예산 독립영화의 구전 마케팅을 위한 스마트폰 모바일 애플리케이션 모델 개발 연구 (A Study on Development of Smartphone Mobile Application for Word-of-Mouth Marketing in Low-Budget Independent Film)

  • 김혜원
    • 한국산학기술학회논문지
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    • 제13권4호
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    • pp.1525-1531
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    • 2012
  • 본 논문은 저예산영화의 흥행을 위해 구전마케팅을 하기위한 마케팅툴의 개발이 목적이다. 무선인터넷과 모바일의 컨버전스로 2천만 명의 사용자를 갖게 된 스마트폰의 저예산 독립영화의 애플리케이션을 개발을 통해 최적의 애플리케이션 서비스, 기능, 환경 등을 알아낸다. 이로써 저예산 독립영화의 마케팅 기반을 구축하여 한국영화 산업의 발전에 기여하고자 한다. 이를 위해 컨조인트 설문과 일반 설문을 종합하여 컨조인트 분석을 실시하였다.

Si 기판위에 Mo-silicides의 형성과 그 특성에 관한 연구 (A Study on the Properties and Formation of Mo-Silicides on Si-Substrate)

  • 조한수;조현춘;최진성;백수현
    • 전자공학회논문지A
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    • 제28A권1호
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    • pp.85-90
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    • 1991
  • MoSi$_2$ was formed by RTA (Rapid Thermal Annealing at 600-1200$^{\circ}C$) under Ar ambient from the Mo-Si mixture film which was deposited on single and poly-Si substrates. The MoSi$_2$ film was investigated by SEM, X-ray diffractometer, four-points probe and AES profile. It was found that the resistivity, the surface roughness, and the formation temperature of MoSi$_2$ were independent on the type of Si substrates. The formation of MoSi$_2$ started from 800$^{\circ}C$ and the phse transformation was completed at 1000$^{\circ}C$. The stable MoSi$_2$ with the resistivity of 74${\mu}{\Omega}$-cm was formed at 1200$^{\circ}C$.

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박막트랜지스터의 문턱전압 이동 시뮬레이션 방안 (Simulation Method of Threshold Voltage Shift in Thin-film Transistors)

  • 정태호
    • 한국전기전자재료학회논문지
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    • 제26권5호
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    • pp.341-346
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    • 2013
  • Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

CdCl2 와 InCl3 를 첨가한 CdS 소결막의 전기적 광학적 성질 (Electrical and Optical Properties of CdS Films Sintered with CdCl2 and InCl3)

  • 김형수;임호빈
    • 대한전기학회논문지
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    • 제39권2호
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    • pp.183-191
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    • 1990
  • Polycrystalline CdS film have been prepared by coating a slurry constiting of CdS, CdCl2, various amount of InCl3 and propylene glycol on glass substrate and by sintering in a nitrogen atmosphere, and their sintering behaviors, electrical properties and optical properties have been investigated. As the amount of InCl3 increases, the enhancing effect of CdCl2 on sistering decreses resulting in a sharp decrease in optical transmittance and an increase in electrical resistivity. The carrier concentration is almost independent of InCl3 added due to the occurrence of chlorine doping and to the compensating effect of indium dopant. Microstructure an optical properties of CdS film, which contain CdCl2 and InCl3 before sintering, can be improved by sintering in a sealed boat.

미세 유체 상 PDMS 고분자 필름의 펨토초 레이저 어블레이션 및 천공 임계치 연구 (fs-laser Ablation and Optoperforation Threshold for PDMS Thin Film on $\mu$-channel)

  • 우숙이;;윤태오;정세채;박일홍
    • 한국정밀공학회지
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    • 제27권2호
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    • pp.29-33
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    • 2010
  • We have investigated fs-laser ablation as well as optoperforation threshold of PDMS (Polydimethylsiloxane) thin lid cover on ${\mu}$-channel with changing the flow medium from water to hemoglobin. The ablation threshold is found to be independent of both PDMS thin film thickness and flow medium, but the optoperforation threshold is dependent on the films thickness. The observation that the ablation process is well described with simple two-temperature model supposed that the cover lid PDMS of $\mu$-channel be processed with minimized thermal effects by fs-laser with low laser fluence.

속경형시멘트의 수화거동에서 폴리머의 영향 (The Influence of Polymers on the Hydration of Modified Cement System)

  • 박필환;이경희
    • 한국세라믹학회지
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    • 제44권9호
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    • pp.496-501
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    • 2007
  • The properties of the polymer-modified mortars are influenced by the polymer film, cement hydrates and the combined structure between the organic and inorganic phases. Also, this quality of polymer modified cement strongly depend on weather condition. To overcome this problem, polymer-modified cement based on rapid setting cement mortars were prepared by varying polymer/cement mass ratio (P/C) with a constant water/cement mass ratio of 0.5. The effect of polymer on the hydration of this polymer cement is studied on different curing temperature. The results showed that the polymer mortar which is modified with rapid setting cement have superior physical strength properties on independent curing temperature. In addition the PIC ratio, the compressive strength, flexural strength, tensile strength and adhesion strength of mortar is enhances and polymer-modified cement based on rapid setting cement is more beneficial to the improvement of the mortar properties in jobsite.

다결정 실리콘 박막 트랜지스터의 성능에 대한 채널 길이의 영향 (Influence of Channel Length on the Performance of Poly-Si Thin-Film Transistors)

  • 이정석;장창덕;백도현;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.450-453
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    • 1999
  • In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

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진공증착중합법에 의해 제초된 폴리이미드 박막의 습도감지 특성에 관한 연구 (A Study on the Humidity Sensing Properties of Polyimide thin films prepared)

  • 황선양;김형권;이붕주;박구범;김영봉;이은학;이덕출
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.402-405
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    • 1999
  • The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

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광원용 탄소박막의 합성 (Fabrication of Carbon Film for New Light Source)

  • 이상헌;최용성;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.553-554
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    • 2006
  • Carbon films was grown on Si substrates using the method of electrolysis for methanol liquid. Deposition parameters for the growth of the carbon films were current density for the electrolysis. methanol liquid temperature and electrode spacing between anode and cathode. We examined electrical resistance and the surface morphology of carbon films formed under various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes was relatively wider. We found that the electrical resistance in the films was independent of both current density and methanol liquid temperature for electrolysis. The temperature dependence of the electrical resistance in the low resistance carbon films was different from one obtained in graphite.

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