• ETRI Journal
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• 제13권4호
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.30-34
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• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

• The Journal of Korean Physical Therapy
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• 제15권3호
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• pp.239-250
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• 2003

This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.92-93
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• 2003

초고속 광전송 네트워크에 사용되는 광부품으로 단일 모드 광섬유와의 낮은 광 결합 손실을 가지는 레이저 다이오드 개발이 필수적이다. 이러한 레이저 다이오드의 요구되는 특성으로써 저가의 광부품 제작을 위해 thermoelectric cooler 없이 고온에서 안정된 동작을 하는 uncooled type에, 광 isolator 도움없이 광반사에 의한 광손실을 줄여야 한다. 이러한 요건을 충족시키기 위하여 선택적 영역 MOCVD성장을 이용한 InP／InGaAsP 계열의 SSC-LD(spot-size converter integrated LD)를 연구하여 왔다. (중략)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국광학회지
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• 제12권4호
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• pp.312-319
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• 2001

본 연구에서는 기존의 RWG LD(Ridge waveguide laser diode)보다 Ridge 폭의 제어가 쉽고 Planar화에 유리하며 측방향의 굴절률차를 성장층의 두께로 조절이 가능한 Buried RWG LD를 제안하였다. 이론해석의 결과로부터 효율적으로 동작하는 MQW B-RWG(Multi-quantum well buried ridge waveguide)LD를 제작하기 위해서는 제작하고자 하는 Ridge 폭에 따라 측장향 유효굴절률차 $\Delta_{nL}$ 의 임계값보다 약간 크게 되도록 유효굴절률 조절을 위한 $d_2(\lambda_g=1.25{\mu}m, InGaAsP layer) 층과 P-InP cald 층인 $d_3$층의 두께를 제어해야 하며 임계전류값이 최소로 되면서 측방향에서 단일모드로 동작하도록 Ridge 폭을 설계해야 한다. 그리고 측방향 유효굴절률차를 적절히 조절한다면 $6~9{\mu}m$의 Ridgechr을 가지면서 단일모드로 동작하는 LD제작이 가능함을 알 수 있었다.

• 대한전자공학회논문지SD
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• 제41권1호
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• pp.29-34
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• 2004

본 연구에서는 광통신 시스템에 응용할 수 있는 InGaAs/lnGaAsP 다중 양자 우물의 장파장용 완전 공핍 광 싸이리스터(depleted optical thyristor)를 제안하고, 도파로 형태로 소자를 제작하여, 최초로 레이징 특성을 측정 분석하였다. 먼저, 완전공핍 광 싸이리스터에 있어서 스위칭 전압과 전류는 각각 4.63 V 와 10uA로 측정되었고, 홀딩 전압(holding voltage)과 전류는 각각 0.59V, 20uA에서 그 특성이 나타났다. 또한, 레이징 되는 문턱 전류(threshold current)는 $25^{\circ}C$에서 111 mA, $10^{\circ}C$에서 72.5 mA로 각각 나타났으며, 문턱 전류의 약 1.41배에 해당하는 동작 전류에서 측정된 레이징 중심 파장은 1.561um로 나타남을 확인하였다.

• 한국항해항만학회지
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• 제26권2호
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• pp.235-243
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• 2002

황섬유의 최저손실 파장영역인 $1.55\mu\textrm{m}$에서 고출력으로 안정하게 농작하는 광센서용 광원인 반도체 레이저를 제작하기 위하여 이론적인 해석을 수행한 후 제작하였다. 활성영역과 SCH층의 재료는 $Ln_{1-x}Ga_xAs_yP_{1-y}$를 사용하였다. 광센서용 광원으로 사용되기 위해서는 넓은 스펙트럼 폭을 가지며, 가간섭 길이가 짧은 특성을 가지는 조건을 만족해야 한다. 따라서, 반도체 레이저에서 레이징을 억제시켜 줌으로써 넓은 스펙트럼 폭을 가지도록 설계를 하였고, 광섬유와 결합효율을 높일 수 있도록 tapered 형태의 스트라입 구조를 채택하여 마스크 패턴을 형성하였다. 또한, 레이징을 억제하기 위하여 후면에 윈도우 영역을 두었고, 측방향으로 경사각을 두어 반사도를 낮추도록 설계 및 제작하였다. 7도와 15도의 측면 경사각을 가지는 구조와 굽은 스트라입 구조를 가지는 소자를 제작하여 특성을 측정한 결과, 광센서용 광원으로서 적용이 가능한 광출력 특성과 넓은 스펙트럼 폭을 가졌다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.271-274
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• 2002

본 논문에서는 광센서용 광원에 적합한 1.55$\mu\textrm{m}$ 파장대의 InGaAsP/InP 반도체레이저를 제작하였다. 레이징을 억제시켜주기 위해서 bending type의 소자를 설계 및 제작하였으며, 제작된 소자의 출력은 펄스 구동전류 100㎃에서 1.6㎽이고, 스펙트럼 폭은 40nm의 값을 가졌다. 그리고, 제작된 광원을 적용하였을 때 광섬유 자이로스코프에 파이버 종단에서의 출력은 $25^{\circ}C$, 직류 100㎃에서 540㎻였고, 스펙트럼 폭은 53nm였다. 그리고, 불규칙잡음 계수는 2.5$\times$10­$^3$deg/√hr였고, 자이로 출력 drift도 잡음수준으로 조사되었다. 따라서, 본 연구에서 제작한 광원을 광섬유 자이로 스코프에 사용 가능함을 확인하였다.

• 대한치과교정학회지
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• 제51권5호
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• pp.313-320
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• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.