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Depleted Optical Thyristor using Vertical-Injection Structure for High Isolation Between Input and Output  

Choi Woon-Kyung (중앙대 공대 전자전기공학부)
Kim Doo-Gun (중앙대 공대 전자전기공학부)
Moon Yon-Tae (중앙대 공대 전자전기공학부)
Kim Do-Gyun (중앙대 공대 전자전기공학부)
Choi Young-Wan (중앙대 전자전기공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.1, 2005 , pp. 30-34 More about this Journal
Abstract
This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.
Keywords
Depleted Optical Thyristor(DOT); Finite Difference Method(FDM); Optical CDMA; Optical ATM; Optical Interconnection;
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