Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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The optimum design of MQW Buried-RWG LD

MQW Buried RWG LD 최적화 설계

  • 황상구 (한국해양대학교 이공대학 전자통신공학과) ;
  • 오수환 (한국해양대학교 이공대학 전자통신공학과) ;
  • 김정호 (한국해양대학교 이공대학 전자통신공학과) ;
  • 김운섭 (한국해양대학교 이공대학 전자통신공학과) ;
  • 김동욱 (한국해양대학교 이공대학 전자통신공학과) ;
  • 하홍춘 (한국해양대학교 이공대학 전자통신공학과) ;
  • 홍창희 (한국해양대학교 이공대학 전자통신공학과)
  • Published : 2001.08.01
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Abstract

We proposed a B-RWG LD (Buried-ridge waveguide laser diode) having more merits than a conventional RWG-LD. It's ridge width is controlled easily, it has the advantage of being more planar than the RWG-LD and it is possible to control refractive index with growth layer thickness. Before fabricating the device, we designed the optimal device for single mode, high efficiency and high power operation. From theoretical analysis, we have to control the $d_2, d_3$ layer thicknesses for lateral effective index difference, $\Delta_{nL}$ to be higher than critical value, and simultaneously consider the ridge width for single mode and low threshold current operation. As a result, it is possible to make a single mode LD having the ridge width of $6~9{\mu}m$ if the lateral effective index difference was controlled properly. perly.

본 연구에서는 기존의 RWG LD(Ridge waveguide laser diode)보다 Ridge 폭의 제어가 쉽고 Planar화에 유리하며 측방향의 굴절률차를 성장층의 두께로 조절이 가능한 Buried RWG LD를 제안하였다. 이론해석의 결과로부터 효율적으로 동작하는 MQW B-RWG(Multi-quantum well buried ridge waveguide)LD를 제작하기 위해서는 제작하고자 하는 Ridge 폭에 따라 측장향 유효굴절률차 $\Delta_{nL}$ 의 임계값보다 약간 크게 되도록 유효굴절률 조절을 위한 $d_2(\lambda_g=1.25{\mu}m, InGaAsP layer) 층과 P-InP cald 층인 $d_3$층의 두께를 제어해야 하며 임계전류값이 최소로 되면서 측방향에서 단일모드로 동작하도록 Ridge 폭을 설계해야 한다. 그리고 측방향 유효굴절률차를 적절히 조절한다면 $6~9{\mu}m$의 Ridgechr을 가지면서 단일모드로 동작하는 LD제작이 가능함을 알 수 있었다.

Keywords

References

  1. Tech. Dig ECOC'93 N. Matsumoto;T. Fukushima;H. Nakayama;Y. Ikegami;Namegaya;A. Kasukawa;M. Shibata
  2. IEEE J. Quantum Electron v.33 no.8 Well number, length, an temperature dependence of effciency and loss in InGaAsP/InP compressively strained MQW ridge waveguide lasers a 1.3μm K. Prosyk;J. G. Simmons
  3. Electron. Lett. v.31 no.12 High performance InGaAsP/InP strained laye MQW lasers with reversed-mesa ridge waveguide struotures M. Aoki;M. Komori;T. Tsuchiya;H. Sato;K. Uomi;T. Ohtoshi
  4. IEEE Photon.Technol. Lett. v.7 no.1 High-power and wide temperature-range operatio of InGaAsP-InP strained MQW lasers with reverse-mesridge-waveguide structure M. Aoki;T. Tsuchiya;K. Nakahara;M. Komori;K. Uomi
  5. Appl. Phys. Lett. v.59 no.26 Low-threshold and high-temperature operation of 1.55 μm self-aligned ridge-waveguid multiple-quantum well lasers grown by chemical beam epiaxy K. Y. Liou;W. T. Tsang;F. S. Choa;E. C. Burrows;G. Raybon;C. A. Burrus
  6. Electron. Lett. v.31 no.12 High performance InGaAsP/InP strained laye MQW lasers with reversed-mesa ridge waveguide struotures M. Aoki;M. Komori;T. Tsuchiya;H. Sato;K. Uomi;Ohtoshi
  7. IEEE J. Quantum Electron. v.11 no.7 $Al_xGa_{1-x}A_s$ double-heterostructure rib-waveguide injection laser T. P. Lee;C. A. Burrus;B. I. Miller;R. A. Logar
  8. Opt. Commun. v.76 no.3;4 Effective index model for MQW waveguides R. A. Sammut;I. M. Skinner
  9. IEEE J. Quantum Electron. v.22 no.9 Gain and the threshold of three-dimensional quantum-box lasers M. Asada;Y. Miymoto;Y. Suematsu
  10. Long-Wavelength Semicorductor Lasers G. P. Agrawal;N. K. Dutta
  11. Trans. IECE of Japan v.E-68 no.8 M. Asada
  12. Semiconductor Lasers G. P. Agrawal
  13. IEEE J. Quantum Electron. v.13 no.8 Transverse-mode cortrol in an injection laser by a strip-loaded waveguide H. Kawaguchi;T. Kawakami
  14. J. Appl. Phys. v.42 no.13 Theory of transverse cavity mode selection in homojunctio and heterojunction semiconductor diode lasers J. K. Butler
  15. 한국광학회지 v.7 no.4 InGaAsP/InP MQW-LD의 최적 설계 하홍춘;오수환;이석정;박윤호;오종환;홍창희
  16. J. Appl. Phys. v.51 no.5 Current-crowded carrier confinement in double-heterostructure lasers W. B. Joyce
  17. J. Appl. Phys. v.53 no.11 Carrier transport in double-heterostructure active layers W. B. Joyce
  18. Appl. Phys. Lett. v.43 no.1 Beam-propagaion analysis of stripe-geometry semicondcutor lasers:Threshold behavior G. P. Agrawal;W. B. Joyce;R. W. Dixon;M. Lax
  19. IEEE J. Quantum Electron. v.22 no.9 Gain and the threshold of three-dimensional quantum-box lasers M. Asada;Y. Miyamoto;Y. Suematsu
  20. IEE Proc. v.133 no.6 Threshold current analysis of InGaAsP-InP ridge-waveguide lasers M. C. Amann;B. Stegmuller
  21. J. Appl. Phys. v.56 no.11 Fast-Fourier-transform based beam-propagation model for stripe-geometry semiconductor lasers:Inclusion of axial effects G. P. Agrawal
  22. Long-Wavelength Semiconductor Lasers G. P. Agrawal;N. K. Dutta
  23. J. Lightwave Technol. v.LT-2 Lateral analysis of quasi-index-guided injection lasers:Transition from gain to index guiding G. P. Agrawal