• 한국재료학회지
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• 제23권1호
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• pp.31-34
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• 2013

Trivalent cerium-ion-doped $Y_3(Al,\;Ga)_5O_{12}$ nanoparticle phosphor nanoparticles were synthesized using the reverse micelle process. The Ce doped $Y_3(Al,\;Ga)_5O_{12}$ particles were obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical states of the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectra for various concentrations of cerium. The photo physical properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were studied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of the synthesized YAG powders was below $1{\mu}m$. Excitation spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ samples were 485 nm and 475 nm, respectively. The emission spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ were around 560 nm and 545 nm, respectively. $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation, and may be a promising candidate for photonic applications.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.55-55
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• 2005

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.131-135
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• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.

• 대한전자공학회논문지SD
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• 제48권5호
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• pp.1-5
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• 2011

본 논문에서는 AlGaN/GaN HEMT의 항복 전압 특성 향상을 위해 2차원 소자 시뮬레이터를 통하여 게이트 필드 플레이트 구조를 최적화하였다. 필드플레이트 길이, 절연체 종류, 절연체 두께 변화 등의 세가지 변수를 이용하여 시뮬레이션을 진행하였으며 그에 따른 전기장 분포의 변화와 항복전압 특성을 확인하였다. 필드플레이트 구조를 최적화 시킴으로서 게이트 에지부분과 필드플레이트 에지부분에 집중 되어있던 전기장이 효과적으로 분산된다. 그에 따라 애벌런치 효과가 줄어들게 되어 항복전압 특성이 향상된다. 결론적으로 최적화된 게이트 필드플레이트 구조는 일반적인 구조에 비해 항복특성을 약 300% 이상 향상시킬 수 있다.

• 한국진공학회지
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• 제17권3호
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• pp.211-214
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• 2008

Metal organic chemical vapor deposition (MOCVD)를 이용하여 사파이어 기판 위에 405 nm의 파장을 갖는 GaN light-emitting diode (LED)를 제작하였다. LED의 InGaN 활성층에서 생성되어 칩의 후면으로 향하는 광자를 전면으로 반사시키기 위하여, 사파이어 기판 후면에 반사막을 증착하였다. 반사막으로는 Al을 사용하였으며, 사파이어 기판에 대한 Al 박막의 접착력을 개선하기 위하여 사파이어 기판 후면에 Ti를 먼저 증착한 후에 Al을 증착하였다. Ti-Al 반사막을 채용한 결과, 광추출 효율이 52 % 향상되었다.

• ETRI Journal
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• 제43권5호
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• 대한물리치료과학회지
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• 제7권2호
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• pp.533-543
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• 2000

This study was designed to evaluate the analgesic effect of low power GaAsAl laser on the pain threshold of mechanical stimulation using different treatment points, acupuncture point (zusanli) and non-acupuncture points(back). Furthermore, we investigated the analgesic effect of low power GaAsAl laser using the different duration and intensity of laser in mechanical stimulation induced pain behavior. The results were summarized as follows: 1. The threshold of mechanical stimulation was significantly increased by GaAsAl laser stimulation into zusanli point after 15 and 30 min after laser stimulation(P<05). However, the laser stimulation into non-acupoint did not affect the pain threshold of mechanical stimulation. with dose dependent manner. 2. In order to investigate the analgesic effects of BV depending upon different intensities of laser stimulation, the experimental animals were divided into three groups: 3 mW treated group, 6 mW treated group and 10 mW treated group. The low power GaAsAl laser stimulation was applied into zusanli acupoint for 30 min with different intensity of laser stimulation. Six and ten mW of laser stimulation significantly increased the pain threshold of mechanical stimulation at 15 min after laser stimulation as compared to that of control group(P<.05). Moreover, the analgesic effect of 10 mW laser stimulation was maintained for 30 min after laser stimulation (P<.05). 3. Finally, we tested the analgesic effect of 10 mW laser stimulation using different duration such as 10 min, 30 min or 1 hr after application of mechanical stimulation. In 30 min treatment group, the pain threshold of mechanical stimulation was increased at 15min and 30min after laser stimulation(P<.05). However, laser stimulation for 60 min dramatically increased the pain threshold of mechanical stimulation at 0 min after laser stimulation and the analgesic effect of laser stimulation was observed until 1 hr after laser stimulation. In conclusion, these data apparently demonstrate that low power GaAsAl laser has analgesic effect on mechanical induced pain model in rats. In addition, the treated point, intensity and duration of laser stimulation should be concerned before clinical application for pain management purpose.

• 센서학회지
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• 제32권6호
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.