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Improving The Breakdown Characteristics of AlGaN/GaN HEMT by Optimizing The Gate Field Plate Structure  

Son, Sung-Hun (School of Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.5, 2011 , pp. 1-5 More about this Journal
Abstract
In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.
Keywords
HEMT; Field-plate; Electric field; Breakdown characteristics;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 S. Selberherr, "Analysis and Simulation of Semiconductor Devices", Springer-Verlag, Wien-New York. 1984.
2 김재무, 김수진, 김동호, 정강민, 최홍구, 한철구, 김태근, "사다리꼴 게이트 구조를 갖는 고내압 AlGaN/GaN HEMT", 전자공학회논문지-SD, 제46권, 제 4호, pp. 10-14, April 2009.
3 정강민, 김수진, 김재무, 김희동, 김태근, "AlGaN/GaN HEMT의 분극현상에 대한 3D 시뮬레이션", 전자공학회논문지-SD, 제 47권, 제 10호, pp. 23-28, Oct. 2010.
4 Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P, "30-W/mm GaN HEMTs by field plate optimization", IEEE Electron Device Lett. 25, pp. 117-119, March 2004.   DOI   ScienceOn
5 S.K. Davidsson, M. Gurusinghe, T.G. Andersson and H. Zirath, "The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructure", Journal of Electronic Materials. 33, pp. 440-444, 2004.   DOI   ScienceOn
6 Shreepad Karmalkar and Umesh K.Mishra, "Enhancement of breakdown voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate", IEEE transactions on electron devices, Vol. 48, No. 8, pp. 1515-1521, 2001.   DOI   ScienceOn
7 Device simulation software Atlas, Atlas User's Manual, Silvaco international (2007).