Browse > Article

Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability  

Gupta, Ritesh (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus)
Aggarwal, Sandeep Kumar (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus)
Gupta, Mridula (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus)
Gupta, R.S. (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.4, no.3, 2004 , pp. 240-249 More about this Journal
Abstract
In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.
Keywords
InAlAs/InGaAs heterostructure; delta doped; uniformly doped; pulsed doped; parallel conduction; channel confinement and breakdown voltage;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Sandeep R Bahl and Jesus A del Alamo, 'Physics of Breakdown in InAlAs/$n^+$ - InGaAs Heterostructure Field -Effect Transistors', IEEE Trans Electron Devices, vol 41, no 12, December 1994 2268-2275   DOI   ScienceOn
2 K. Hikosaka, Y. Hirachi and M. Abe, 'Microwave Power Double Heterojunction HEMT's,' IEEE Trans. Electron Devices, Vol. ED-33, 1986, Pp.583-589   DOI   ScienceOn
3 K. Higuchi, H. Matsumoto, T. Mishima and T. Nakamura, 'High Breakdown voltage lnAlAs/InGaAs High Electron Mobility Transistor on GaAs with Wide Recess Structure,' Jpn. J. Appl. Phys. Vol. 38, 1999, Pp. 1178-1181   DOI
4 Jau-Wen Chen, Mohan Thurairaj, and Mukunda B Das, 'Optimization of Gate-to-Drain separation in Submicron Gate-Length Modulation Doped FET's for Maximum Power Gain performance,' IEEE Trans Electron Devices, Vol 41, 1994, Pp 465-475   DOI   ScienceOn
5 AN-Jui Shey and Walter H. Ku, 'An Analytical Current voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulation,' IEEE Tran, Electron Device, Vol. 36, 1989, Pp 2299-2306   DOI   ScienceOn
6 Laurence P. Sadwick and K. L. Wang, 'A Treatise on the Capacitance - Voltage Relation of High Electron Mobility Transistors,' IEEE Trans. Electron Devices, Vol. 33, 1986, Pp 651-656   DOI   ScienceOn
7 S. H. Wemple, W. C. Niehausm, H. M. Cox, J. M. Dilorenzo, and W. O. Schlosser, 'Control of gate-drain avalanche in GaAs MESFET's, ' IEEE Trans. Electron Devices, Vol. ED-27, 1980, Pp. 1013-1018   DOI   ScienceOn
8 Ritesh Gupta, M Gupta and R S Gupta 'A New Depletion dependent Analytical Model for Sheet Carrier density of InAlAs/lnGaAs heterostructure, InP based HEMT,' Solid State Electronics, Vol 47, 2003, Pp 33-38   DOI   ScienceOn
9 L Nguyen, A Brown, M Delaney, L Mishra, L Larson, L Jelloian, M Melendes, C Hooper and M Thompson, 'Vertical Scaling of Ultra-High Speed AlInAs-GaInAs HEMTs,' IEDM 1989, Pp 89-105   DOI
10 Ritesh Gupta, A Kranti, S Haldar, M Gupta and R S Gupta, 'An Analytical parasitic resistance dependent $I_d-V_d$ model for Planar doped InAIAs InGaAs/InP HEMT using Non-linear Charge control Analysis,' Microelectronic Engineering, Vol 60, 2002, Pp 323-337   DOI   ScienceOn
11 P C Chao, M S Shur, R C Tiberio, K H George Duh, P M Smith, J M Ballingall, P Ho and A A Jabra, 'DC and Microwave Characteristics of Sub-0.1${\mu}m$ gate-length planar doped pscudomorphic HEMT,' IEEE Trans Electron Devices, Vol 36, 1989, Pp 461-473   DOI   ScienceOn
12 H Tian, K W Kim, M A Littlejohn, S M Bedair and L C Witkowski, 'Two-dimensional analysis of short-channel delta-doped GaAs MESFET's,' IEEE Trans Electron Devices Vol 39, 1992, Pp 1998-2006   DOI   ScienceOn
13 J J Brown, A S Brown, S E Rosenbaum, A S Schimitz, M Matloubian, L E Larson, M A Melendes and M A Thompson, 'Study of the dependence of $Ga_{0.47}In_{0.53}As/Al_xIn_{1-x}As$ power HEMT breakdown voltage on Schottky layer design and device layout,' 51st device Research conference, June 1993, Santa Barbara, CA, USA
14 K W Kim, H Tian and M A Littlejohn, 'Analysis of delta-doped and uniformly doped A1GaAs/GaAs HEMT's by ensemble Monte Carlo Sunulation,' IEEE Trans Election Devices, Vol 38,1991 Pp 1737-1742   DOI   ScienceOn
15 K B Chough, W P Hong, C Caneau, J I Song and J R Hayes, 'OMCVD grown AlInAs/GaInAs HEMT's with AIGalnP Schottky layer,' 51st Device Research Conference, June 1993, Santa Barbara, CA, USA
16 M Matloubian, L D Nguyen, A S Brown, L E Larson, M A Melendes and M A Thompson, 'High power and high efficiency AllnAs/GalnAs on InP HEMT's.' IEEE MTT-S symposium, 1991, conference Digest, p 721   DOI
17 C L Lin, P Chu, A L Kellner and H H Wieder, 'Composition dependence of Au/$In_xAl_{1-x}$As Schottky barrier heights,' Applied Physics letters, VoI 49, no 23, p 1593, 1986   DOI
18 K lmanishi, T Ishikawa and K Kondo, '$N-In_xAl_{1-x}As/In_{0.53}Ga_{0.47}As$ pseudomorphic selectively doped heterostructures with Improved Schottky characteristics,' lnstitute of physics conference series, no 106, p 637, 1990
19 T ltoh, A S Brown, L H Camnitz, G W Wicks, J O Berry, and L F Easman, 'Depletion - and enhancement mode $AI_{0.48}In_{0.52}As/Ga_{0.47}In_{0.47}As$ modulation doped field effect transistors with a recessed gate structure,' Institute of physics conference series, no 79, p 571, 1986
20 K Higuchi, H Matsumoto, T Mishima and T Nakamura, 'High Breakdown voltage InAlAs/lnGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure,' Jpn J Appl Phys Vol 38, 1999, pp 1178-1181   DOI
21 Gaudenzio Meneghesso and Enrico Zanoni, 'Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors', Microelectronic reliability Vol 42, 2002, 685-708   DOI   ScienceOn
22 Ammar Sleiman, AIdo Di Carlo, Paolo Lugli, G Meneghesso, E Zanoni and J L Thobel, 'Channel Thickness dependence of Breakdown Dynamic in InP-based lattice-Matched HEMTs,' IEEE Trans Electron Device, vol 50, no 10, October 2003 2009-2014   DOI   ScienceOn
23 Mark H Somerville, Chris S Putnam and Jesus A del Alamo, 'Determining dominant breakdown mechanisms in InP HEMTs', IEEE Electron Device letters, vol 22, no 12, December 2001 565-567   DOI   ScienceOn
24 M Borgarino, R Menozzi, D Dieci, L Cattani and F Fantini, 'Reliability physics of compound semiconductor transistors for microwave applications', Microelectronic Reliability vol 41, 2001, 21-30   DOI   ScienceOn
25 Sandeep R Bahl, Jesus A del Alamo, Jurgen Dickmann and Steffen Schildberg, 'Off State Breakdown in InAIAs/lnGaAs MODFET's', IEEE Trans Electron Device, vol 42, no 1, January 1995 15-22   DOI   ScienceOn
26 Aldo Di Carlo, Lorenzo Rossi, Paolo Lugli, Gunther Zandler, Gaudenzio Meneghesso, Mike Jackson and Enrico Zanoni, 'Monte Carlo Study of the Dynamic Breakdown Effects in HEMT's', IEEE Electron Device Letters, vol 21, no 4 April 2000, 149-151   DOI   ScienceOn