Browse > Article
http://dx.doi.org/10.5757/JKVS.2008.17.3.211

Enhancement in the light extraction efficiency of 405 nm light-emitting diodes by adoption of a Ti-Al reflection layer  

Kim, C.Y. (Department of Applied Physics, Dankook University)
Kwon, S.R. (Department of Applied Physics, Dankook University)
Lee, D.H. (Department of Applied Physics, Dankook University)
Noh, S.J. (Department of Applied Physics, Dankook University)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.3, 2008 , pp. 211-214 More about this Journal
Abstract
GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.
Keywords
GaN; 405 nm LED; Ti-Al reflector; Light extraction efficiency;
Citations & Related Records
Times Cited By KSCI : 5  (Citation Analysis)
연도 인용수 순위
1 K. S. Kim, A. Saxler, P. Kung, M. Razeghi, and K. Y. Lim, Appl. Phys. Lett. 71, 800 (1997)   DOI   ScienceOn
2 Y. J. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540(1987)   DOI
3 Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita, and S. Nakamura, Phys. Status Solidi A 178, 331 (2000)   DOI   ScienceOn
4 C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, Opt. Eng. 43, 1700 (2004)   DOI   ScienceOn
5 J. B. Lee, S. H. Yoon, D. W Kim, and C. H. Choi, 전자공학회논문지 44(SD4), 91 (2007)   과학기술학회마을
6 D. J. Kim and C. Huh, Proc. KIEE. 48, 10 (1999)
7 O. Shmatov and Z.S. Li, IEE Proc.-Optoelectron. 150, 3, 273 (2003)
8 Y. C. Yoo, I. K. Han, and J. I. Lee, J. Kor. Vac. Soc. 16, 353 (2007)   과학기술학회마을   DOI   ScienceOn
9 T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004)   DOI   ScienceOn
10 M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I.. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, Appl. Phys. Lett. 75, 2365 (1999)   DOI
11 J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, Appl. Phys. Lett. 78, 3379 (2001)   DOI   ScienceOn
12 J. U. Seo, C. Y. Kim, H. S. Kim, and S. J. Noh, J. Kor. Vac. Soc. 12, 235 (2003)
13 M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, and R. F. Daviset, J. Nitr. Semi. Res. 1, 8 (1996)
14 T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001)   DOI   ScienceOn
15 H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, Appl. Phys. Lett. 83, 4483 (2003)   DOI   ScienceOn
16 Y. Kim, J. Kor. Vac. Soc. 16, 210 (2007)   과학기술학회마을   DOI   ScienceOn
17 D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997)   DOI   ScienceOn
18 Q. Guo, H. Ogawa, and A. Yoshida, Crystal Growth 146, 462 (1995)   DOI   ScienceOn
19 K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46, 3432 (1975)   DOI   ScienceOn
20 S. J. Lee, J. O. Kim, C. S. Kim, S. K. Noh, and K. Y. Lim, J. Kor. Vac. Soc. 16, 27 (2007)   과학기술학회마을   DOI   ScienceOn