Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Enhancement in the light extraction efficiency of 405 nm light-emitting diodes by adoption of a Ti-Al reflection layer

Ti-Al 반사막을 이용한 405 nm LED의 광추출 효율 향상

  • Kim, C.Y. (Department of Applied Physics, Dankook University) ;
  • Kwon, S.R. (Department of Applied Physics, Dankook University) ;
  • Lee, D.H. (Department of Applied Physics, Dankook University) ;
  • Noh, S.J. (Department of Applied Physics, Dankook University)
  • 김창연 (단국대학교 죽전 센트로 캠퍼스 응용물리학과) ;
  • 권새롬 (단국대학교 죽전 센트로 캠퍼스 응용물리학과) ;
  • 이두형 (단국대학교 죽전 센트로 캠퍼스 응용물리학과) ;
  • 노승정 (단국대학교 죽전 센트로 캠퍼스 응용물리학과)
  • Published : 2008.05.30
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Abstract

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

Metal organic chemical vapor deposition (MOCVD)를 이용하여 사파이어 기판 위에 405 nm의 파장을 갖는 GaN light-emitting diode (LED)를 제작하였다. LED의 InGaN 활성층에서 생성되어 칩의 후면으로 향하는 광자를 전면으로 반사시키기 위하여, 사파이어 기판 후면에 반사막을 증착하였다. 반사막으로는 Al을 사용하였으며, 사파이어 기판에 대한 Al 박막의 접착력을 개선하기 위하여 사파이어 기판 후면에 Ti를 먼저 증착한 후에 Al을 증착하였다. Ti-Al 반사막을 채용한 결과, 광추출 효율이 52 % 향상되었다.

Keywords

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