• Journal of the Korean Ceramic Society
• /
• v.52 no.2
• /
• pp.146-149
• /
• 2015

Silicate glasses with different $Nd_2O_3$ concentrations were prepared through conventional melt-quenching methods while PbS quantum dots (QDs) were precipitated through heat treatment. The peak wavelengths of absorption and the photoluminescence of PbS QDs shifted to the short-wavelength side as the concentration of $Nd_2O_3$ increased. The electron energy loss spectroscopy (EELS) indicated that $Nd^{3+}$ ions were preferentially distributed inside the PbS QDs instead of the glass matrix. In addition, there was no significant change in the lifetimes of the $Nd^{3+}:^4F_{3/2}$ fluorescence between the as-prepared glass ($607{\mu}s$) and the heat-treated glass($576{\mu}s$). $Nd^{3+}$ ions were surrounded by oxygen instead of sulfur and the Nd-O clusters probably acted as nucleating centers for the formation of PbS QDs inside the glasses.

• Journal of the Optical Society of Korea
• /
• v.10 no.4
• /
• pp.184-187
• /
• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.663-668
• /
• 2003

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.606-610
• /
• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.170-172
• /
• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• Progress in Superconductivity and Cryogenics
• /
• v.24 no.4
• /
• pp.55-58
• /
• 2022

Carbon-based doping to MgB₂ superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB₂ superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB₂ bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB₂ possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB₂ lattice. Also, high-field J_c for the doped MgB₂ is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

• Applied Science and Convergence Technology
• /
• v.25 no.6
• /
• pp.158-161
• /
• 2016

Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1255-1260
• /
• 2018

In this work, a green and simple one-pot route was developed for the synthesis of highly fluorescent aminofunctionalized graphene quantum dots (a-GQDs) via hydrothermal process without any further modification or surface passivation. We synthesized the a-GQDs using glucose as the carbon source and ammonium as a functionalizing agent without the use of a strong acid, oxidant, or other toxic chemical reagent. The as-obtained aGQDs have a uniform size of 3-4 nm, high contents of amino groups, and show a bright green emission with high quantum yield of 32.8%. Furthermore, the a-GQDs show effective fluorescence quenching for $Cu^{2+}$ ions which can serve as effective fluorescent probe for the detection of $Cu^{2+}$. The fluorescent probe using the obtained aGQDs exhibits high sensitivity and selectivity toward $Cu^{2+}$ with the limit of detection as low as 5.6 nM. The mechanism of the $Cu^{2+}$ induced fluorescence quenching of a-GQDs can be attributed to the electron transfer by the formation of metal complex between $Cu^{2+}$ and the amino groups on the surface of a-GQDs. These results suggest great potential for the simple and green synthesis of functionalized GQDs and a practical sensing platform for $Cu^{2+}$ detection in environmental and biological applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.222.1-222.1
• /
• 2015

Recently, graphene quantum dots (GQDs) have attracted great attention due to various properties including cost-effectiveness of synthesis, low toxicity, and high photostability. Nevertheless, the origins of photoluminescence (PL) from GQDs are unclear because of extrinsic states of the impurities, disorder structures, and oxygen-functional groups. Therefore, to utilize GQDs in various applications, their optical properties generated from the extrinsic states should be understood. In this work, we have focused on the effect of oxygen-functional groups in PL of the GQDs. The GQDs with nanoscale and single layer are synthesized by employing graphite nanoparticles (GNPs) with 4 nm. The series of GQDs with different amount of oxygen-functional groups were prepared by the chain of chemical oxidation and reduction process. The fabrication of a series of graphene oxide QDs (GOQDs) with different amounts of oxygen-contents is first reported by a direct oxidation route of GNPs. In addition, for preparing a series of reduced GOQDs (rGOQDs), we employed the conventional chemical reduction to GOQDs solution and controlled the amount of reduction agents. The GOQDs and rGOQDs showed irreversible PL properties even though both routes have similar amount of oxyen-functional groups. In the case of a series of GOQDs, the PL spectrum was clearly redshifted into blue and green-yellowish color. On the other hand, the PL spectrum of rGOQDs did not change significantly. By various optical measurement such as the PL excitation, UV-vis absorbance, and time-resolved PL, we could verify that their PL mechanisms of GOQDs and rGOQDs are closely associated with different atomic structures formed by chemical oxidation and reduction. Our study provides an important insights for understanding the optical properties of GQDs affected by oxygen-functional groups. [1]

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.209-215
• /
• 2006

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.