• Title/Summary/Keyword: In interlayer

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Tribology and Phase Evolution of Cr-Mo-N Coatings with Different Interlayer Condition (중간층 조건에 따른 Cr-Mo-N 막의 상형성 및 마찰마모 거동 연구)

  • Yang, Young-Hwan;Lyo, In-Woong;Park, Sang-Jin;Im, Dae-Sun;Oh, Yoon-Suk
    • Journal of the Korean institute of surface engineering
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    • v.44 no.6
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    • pp.269-276
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    • 2011
  • Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

Interlayer Coupling of CoFe/Cu/NiFe Trilayer Films

  • Baek, Jong-Sung;Lim, Woo-Woung;Lee, Soo-Hyung;Kim, Mee-Yang;Rhee, Jang-Roh
    • Journal of Magnetics
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    • v.5 no.4
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    • pp.139-142
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    • 2000
  • The interlayer coupling between adjacent ferromagnetic layers was examined for CoFe/Cu/NiFe trilayer systems. A series of films of CoFe (20 nm)/Cu($t_{cu}$)/NiFe (20 nm) trilayers with Cu spacer thickness, $t_{cu}$, in the range of 1~10 m was deposited on Si(100) wafers at room temperature by DC magnetron sputtering. In order to understand the dependence of the magnetic interaction between ferromagnetic $Co_{90}Fe_{10}$ (wt.%) and $Ni_{81}Fe_{19}$ (wt.%) layers separated by a nonmagnetic Cu spacer on the Cu layer thickness, we investigated the derivative ferromagnetic resonance (FMR) spectra. The FMR results were analyzed using the model of Layadi and Art-man for interlayer interaction. The interlayer coupling constant decreases in an oscillatory manner as the Cu spacer thickness increases up to 10 nm and approaches zero above 10 nm. The interlayer coupling constant is positive for all samples. Hence, it seems that the exchange coupling between adjacent CoFe and NiFe layers separated by a Cu layer is ferromagnetic.

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Novel Ni-Silicide Structure Utilizing Cobalt Interlayer and TiN Capping Layer and its Application to Nano-CMOS (Cobalt Interlayer 와 TiN capping를 갖는 새로운 구조의 Ni-Silicide 및 Nano CMOS에의 응용)

  • 오순영;윤장근;박영호;황빈봉;지희환;왕진석;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.12
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    • pp.1-9
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    • 2003
  • In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

A Study on Thermal Stability Improvement in Ni Germanide/p-Ge using Co interlayer for Ge MOSFETs

  • Shin, Geon-Ho;Kim, Jeyoung;Li, Meng;Lee, Jeongchan;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.277-282
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    • 2017
  • Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

Effect of silica top layer and Co interlayer on the thermal stability of nickel silicide (니켈 실리사이드의 열안정성에 대한 실리카 상부막과 코발트 중간막의 영향)

  • Han Kil Jin;Cho Yu Jung;Kim Yeong Cheol;Oh Soon Young;Kim Yong Jin;Lee Won Jae;Lee Hi Deok
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.2 s.11
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    • pp.7-10
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    • 2005
  • [ $SiO_{2}$ ] or SiON is usually deposited and annealed after formation of silicide in real transistor fabrication processes. Nickel silicide and nickel silicide with Co interlayer were annealed at 650$^{\circ}C$ for 30 min with silica top layer in this study to investigate its thermal stability. SEM, XPS, and FPP(four point probe) were employed for the investigation. Nickel silicide with Co interlayer showed improved thermal stability. Co interlayer seems to play a key role to the stability of nickel silicide.

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The Effects of Additional Gases(C,H,O) on Adhesive strength Ti$_{x}$N Films Prepared by the DC Magetron Suttering Method (DC Magetron Suttering법으로 제작한 Ti$_{x}$N 박막의 밀착력에 미치는 첨가원소(C,H,O))

  • 김학동;조성식
    • Journal of the Korean institute of surface engineering
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    • v.31 no.3
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    • pp.142-150
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    • 1998
  • Stainless steel is being used widely for various purposes due to its good corrosion resistance. There has been much research to produce colored stainless steel by several methods such as anodizing and ion plating. In this experiment, we coated TiN(C,O,H)films SUS304 substraate with the DC magnetron spttering system made by Leybold Heraeus and studied the interlater structure and abhesive strength of the films as a function of additional gases, acetylene, hydrogen and oxygen. When the acetylene gas was added into the chamber, the specimen with the interlayer phase had good adhesion due to the toughness of the $\gamma'-Fe_4N$ plase induced from a solid solution of carbon atoms, while low adhesion appeared on the specimen of the non interlayer phase. The formation of the interlayer phase($\gamma'-Fe_4N$) was due to hydrogen embrittlement and internal stress induced by $\gamma'-Fe_4N$ formation in the interlayer. We could fine the interlayer phase ($\gamma'-Fe_4N$) at the interface between the film and the substrate of the TEM image when $\gamma'-Fe_4N$ was detected by the X-ray duffraction metheod.

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The Influence of Ag Thickness on the Electrical and Optical Properties of ZnO/Ag/SnO2 Tri-layer Films

  • Park, Yun-Je;Choi, Jin-Young;Choe, Su-Hyeon;Kim, Yu-Sung;Cha, Byung-Chul;Kim, Daeil
    • Journal of the Korean institute of surface engineering
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    • v.52 no.3
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    • pp.145-149
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    • 2019
  • Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.

Studies on weldment performance of Ti/Al dissimilar sheet metal joints using laser beam welding

  • Kalaiselvan, K.;Elango, A.;Nagarajan, N.M.;Mathiazhagan, N.;Vignesh, Kannan
    • Coupled systems mechanics
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    • v.7 no.5
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    • pp.627-634
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    • 2018
  • Laser beam welding is more advantageous compared to conventional methods. Titanium/Aluminium dissimilar alloy thin sheet metals are difficult to weld due to large difference in melting point. The performance of the weldment depends upon interlayer formation and distribution of intermetallics. During welding, aluminium gets lost at the temperature below the melting point of titanium. Therefore, it is needed to improve a new metal joining techniques between these two alloys. The present work is carried for welding TI6AL4V and AA2024 alloy by using Nd:YAG Pulsed laser welding unit. The performance of the butt welded interlayer structures are discussed in detail using hardness test and SEM. Test results reveal that interlayer fracture is caused near aluminium side due to low strength at the weld joint.

Joinability of Tool Steels by TLP Bonding (천이액상확산접합에 의한 합금공구강의 접합특성)

  • 권병대;이원배;김봉수;홍태환;서창제;정승부
    • Journal of Welding and Joining
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    • v.21 no.4
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    • pp.69-74
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    • 2003
  • The mechanical properties of STD11 Joints by using TLP (Transient Liquid Phase Diffusion) bonding method employing MBF-30 and MBF-80 insert metals were investigated with concerning to the microstructural change. TLP bonding of STD 11 was carried out at 1323∼1423K for 0.6ks∼3.6ks in vacuum. The microstructure and the element distribution of the interlayer between tool steels and insert metals showed specific feature with bonding conditions. It was found that the width of the interlayer increased at initial bonding stage. However, the width of interlayer showed nearly constant value during the isothermal solidification. After isothermal solidification was completed, the joint showed homogeneous element distribution and similar microstructure with base metal because of the grain boundary migration to the bonded interlayer. The bonding strength measured by a tensile test has been varied with the bonding conditions. The maximum joint strength, 760MPa, was obtained with the condition of 1423K for 1.2ks using MBF30 insert metal in this experiment.

Tailoring Magnetic Interlayer Coupling Contribution via Lateral Confinement (가로 가둠을 통한 자성층간 결합 기여도 조절)

  • Lee, Dong Ryeol
    • Journal of the Korean Magnetics Society
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    • v.26 no.5
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    • pp.149-153
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    • 2016
  • In Fe/Gd multilayers, patterning effect on the interlayer coupling was studied by comparing patterned and unpatterned samples that were cut from a multilayer film. A comparative study of the two samples via temperature dependent Gd-specific magnetization vector using X-ray magnetic circular dichroism (XMCD) shows that the temperature dependence of the Gd magnetization vector can be modified in the patterned sample due to a competition between the patterning and antiferromagnetic interlayer coupling effects.