Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect of silica top layer and Co interlayer on the thermal stability of nickel silicide

니켈 실리사이드의 열안정성에 대한 실리카 상부막과 코발트 중간막의 영향

  • Han Kil Jin (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Cho Yu Jung (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Kim Yeong Cheol (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Oh Soon Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim Yong Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee Won Jae (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee Hi Deok (Dept. of Electronics Engineering, Chungnam National University)
  • 한길진 (한국기술교육대학교 신소재공학과) ;
  • 조유정 (한국기술교육대학교 신소재공학과) ;
  • 김영철 (한국기술교육대학교 신소재공학과) ;
  • 오순영 (충남대학교 전자공학과) ;
  • 김용진 (충남대학교 전자공학과) ;
  • 이원재 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2005.06.01
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Abstract

[ $SiO_{2}$ ] or SiON is usually deposited and annealed after formation of silicide in real transistor fabrication processes. Nickel silicide and nickel silicide with Co interlayer were annealed at 650$^{\circ}C$ for 30 min with silica top layer in this study to investigate its thermal stability. SEM, XPS, and FPP(four point probe) were employed for the investigation. Nickel silicide with Co interlayer showed improved thermal stability. Co interlayer seems to play a key role to the stability of nickel silicide.

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