• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.656-659
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• 2001

Recently, as device techniques are advancing and its size become smaller, the hot carriers transport analysis has more important. Impact ionization(I.I.) effect is electron-hole pair generation process by the dispersion of hot carrier in the contrast with Auger process. Complete I.I. model is essential to simulate and analysis the device transport characteristics. In the study, we will try to analysis I.I. models using Monte Carlo simulator, TCAD and Micro-Tec and present more accurate I.I. model.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1499-1507
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• 2017

This paper presents an impact-based piezoelectric vibration energy harvester using a freely movable metal sphere and a piezoceramic fiber-based MFC (Macro Fiber Composite) as piezoelectric cantilever. The free motion of the metal sphere, which impacts both ends of the cavity in an aluminum housing, generates power across a cantilever-type MFC beam in response to low frequency vibration such as human-body-induced motion. Impacting force of the spherical proof mass is transformed into the vibration of the piezoelectric cantilever indirectly via the aluminum housing. A proof-of-concept energy harvesting device has been fabricated and tested. Effect of the indirect impact-based system has been tested and compared with the direct impact-based counterpart. Maximum peak-to-peak open circuit voltage of 39.8V and average power of $598.9{\mu}W$ have been obtained at 3g acceleration at 18Hz. Long-term reliability of the fabricated device has been verified by cyclic testing. For the improvement of output performance and reliability, various devices have been tested and compared. Using device fabricated with anodized aluminum housing, maximum peak-to-peak open-circuit voltage of 34.4V and average power of $372.8{\mu}W$ have been obtained at 3g excitation at 20Hz. In terms of reliability, housing with 0.5mm-thick steel plate and anodized aluminum gave improved results with reduced power reduction during initial phase of the cyclic testing.

• Journal of Biosystems Engineering
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• v.33 no.5
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• pp.348-354
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• 2008

Egg grading is determined by exterior and interior quality. Among the evaluation methods for the egg quality, a candling method is common to identify eggs with cracked shells and interior defects. But this method is time-consuming and laborious. In addition, practically, it is challenging to detect hairline and micro cracks. In this study, an on-line inspection system based on acoustic resonance frequency analysis was developed to detect hairline cracks on eggshells. A roller conveyor was used to transfer eggs along one lane to the impact position where each of eggs rotated by the roller was excited with an impact device at four different locations on the eggshell equator. The impact device was consisted of a plastic hammer and a rotary solenoid. The acoustic response of the egg to the impact was measured with a small condenser microphone at the same position as the impact device was installed. Two acoustic parameters, correlation coefficient for normalized power spectra and standard deviation of peak resonant frequencies, were used to detect cracked eggs. Intact eggs showed relatively high correlations among the four normalized power spectra and low standard deviations of the four peak resonant frequencies. On the other hand, cracked eggs showed low correlations and high standard deviations as compared to the intact. This method allowed a crack detection rate of 97.6%.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.100-109
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• 1995

A new Hydrodynamic model for the high energy tail electrons(Tail Electron Hydrodynamic Model : TEHD) is developed using the moment method. The Monte Carlo method is applied to a $n^{+}-n^{-}-n^{+}$ device to calibrate the TEHD equations. the discretization method and numerical procedures are explained. New models for the impact ionization and injection into the gate oxide using the tail electron density are proposed. The simulated results of the impact ionization rate for a $n^{+}-n^{-}-n^{+}$ device and MOSFET devices, and the gate injection experiment are shown to give good agreement with the Monte Carlo simulation and the measurements.

• The Journal of the Korean dental association
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• v.56 no.6
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• pp.324-332
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• 2018

A mouthguard is a protective device normally worn on the upper jaw, to reduce injures to the teeth, jaws and surrounding soft tissues. It has a definite role in preventing injuries to the teeth and face and for this reason it is strongly recommended for all sporting activities where there is a risk of trauma to the teeth and associated structures. Mouthguards can be effective in reducing impact force to the teeth, and attributed to enhancement of postural control and muscle performance during teeth clenching. Although there is evidence that mouthguards reducing impact force to the teeth, and prevent orofacial trauma occurrence during sport practice, the influence of this device on athletic performance has not been systematically quantified. Nevertheless, wearing a dentally fitted laminated mouthguard of at least 3 mm thickness can be strongly recommended during sport practice.

• Journal of the Korean GEO-environmental Society
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• v.18 no.8
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• pp.17-21
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• 2017

This paper is to grasp the use of impact-echo response signal induced from impacting an object for the assessment of compressive strength of construction materials nondestructively and to propose the test results. For this study, an impact device was devised and used for impacting an object by an initial rotating free falling impact and following repetitive impacts from the rebound action which eventually disappears. Concrete test specimens which had been mixed for different strengths were tested and the impact echo response signal was measured for each test specimen. The total sound signal energy which is assessed from integrating the impact-echo response signal was compared with the directly measured compressive strength for each specimen. The comparison showed that the total sound signal energy has a direct relationship with the directly measured compressive strength and the results clearly indicated that the compressive strength of construction materials can be assessed nondestructively using total sound signal energy which is assessed from integrating the impact-echo response signal induced from impacting an object.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.389-393
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• 1999

The exact model of impact ionization events in which has influence on device efficiency, is to be necessary element for device simulation. Recently, a modified Keldysh formula with two set of power exponent of 7.8 and 5.6 is used to simulate carrier transport. This model is, however, not suitable as impact ionization model in low energy range since this ignore direction dependent properties of impact ionization. The impact ionization rate is highly anisotropic at low energy, while it becomes isotropic at higher energy range. Note that impact ionization events frequently occur in high energy range. For calculating impart ionization rate, we use full energy band structure derived from Fermi's golden rule and empirical pseudopotential method. We compare with calculated and experimental value, and investigate direction dependent conduction energy band structure along the direction of <100>, <110> and <111>. We know that the threshold energy of impact ionization is anisotropic and impact ionization rate is very deviated from modified Keldish formula, in relatively low energy range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.204-209
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• 2016

The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.199-204
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• 2000

A cylindrical brake device with plastic deformation is designed to stop the object moving at high velocity. Baseline model is determined based on the design specification and analytic solutions. Using finite element method, effects of various design parameters, such as thickness of the cylinder, clearance between cylinder and rod, and cone angle, to the performance of the brake device are investigated. Cone-type brake device shows better performance than cylindrical brake device with constant thickness in that plastic hinges are generated sequentially from impact end to fixed boundary, thus increasing the reliability of braking operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.