• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• Archives of Pharmacal Research
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• v.4 no.2
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• pp.85-90
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• 1981

A quantitative GC-MS spectrometric assay was used for the determination of residual N, N-dimethylaniline as a contaminant in commercial penicillin derivatives from various sources. The assay utilizes selective ion focusing to monitor in a GC effluent the molecular ions of DMA generated by electron impact ionization. This method includes dissolution of the sample in alkaline solution, extraction of organic base with cyclohexane and injection into GC-MS with a 3% OV-17 column. Levels of 50 ppb of DMA were easily measured with a coeffecient of varation less than 5 % and recoveries from spiked samples exceeded 97 %. The results of the determinations of DMA in various commercial penicillins were relatively free of this contaminant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.201-202
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• 2005

The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.341-343
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range $1-100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. The first sign of incipient breakdown revealed by transmission electron microscopy of stripped films, is always the appearance of dark regions about 1,000 nm in diameter, representing local overgrowth of the film. The breakdown mechanism is closely related to thermal effects, because temperature rises at regions representing local overgrowth in the stripped films were observed at voltages close to the breakdown voltage, likely arising through impact ionization.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.45 no.11
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• pp.932-938
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• 2017

Particle-in-cell method which blends Eulerian grids and Lagrangian particle is utilized to solve simplified hall-effect thruster. Since this study individually tracks not only neutrons and ions but also electrons, message passing interface(mpi) scheme is adopted for parallel computer cluster. Helical movement of an electron cloud in constant magnetic field is validated comparing with an exact solution. A plasma in radial magnetic field and axial electric field in a reaction cylinder is established. Electrons do double helix movement and are well anchored in a cylinder. Ionization of neutrons by impact with high-speed electrons generates ion particles. They are accelerated by axial electric field, which forms a plume of a plasma-effect thruster.

• Journal of Microbiology and Biotechnology
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• v.29 no.4
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• pp.548-557
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• 2019

Staphylococcus species have a ubiquitous habitat in a wide range of foods, thus the ability to identify staphylococci at the species level is critical in the food industry. In this study, we performed rapid identification of Staphylococcus species using Matrix-Assisted Laser Desorption/Ionization Time-of-Flight mass spectrometry (MALDI-TOF MS). MALDI-TOF MS was evaluated for the identification of Staphylococcus reference strains (n = 19) and isolates (n = 96) from various foods with consideration for the impact of sample preparation methods and incubation period. Additionally, the spectra of isolated Staphylococcus strains were analyzed using principal component analysis (PCA) and a main spectra profile (MSP)-based dendrogram. MALDI-TOF MS accurately identified Staphylococcus reference strains and isolated strains: the highest performance was by the EX method (83.3~89.5% accuracy) at species level identification (EDT, 70.3~78.9% accuracy; DT, less than 46.3~63.2% accuracy) of 24-h cultured colonies. Identification results at the genus level were 100% accurate at EDT, EX sample preparation and 24-h incubation time. On the other hand, the DT method showed relatively low identification accuracy in all extraction methods and incubation times. The analyzed spectra and MSP-based dendrogram showed that the isolated Staphylococcus strains were characterized at the species level. The performance analysis of MALDI-TOF MS shows the method has the potential ability to discriminate between Staphylococcus species from foods in Korea. This study provides valuable information that MALDI-TOF MS can be applied to monitor microbial populations and pathogenic bacteria in the food industry thereby contributing to food safety.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.156-157
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• 2012

단일 셀에서 비휘발성 및 고속의 휘발성 메모리를 모두 구동할 수 있는 다기능 메모리는 모바일 기기 및 embedded 장치의 폭발적인 성장에 있어 그 중요성이 커지고 있다. 따라서 최근 이러한 fusion기술을 응용한 unified RAM (URAM)과 같은 다기능 메모리의 연구가 주목 받고 있다. 이러한 다목적 메모리는 주로 silicon on insulator (SOI)기반의 1T-DRAM과 SONOS기술 기반의 비휘발성 메모리의 조합으로 이루어진다. 하지만 이런 다기능 메모리는 주로 단결정기반의 SOI wafer 위에서 구현되기 때문에 값이 비싸고 사용범위도 제한되어 있다. 따라서 이러한 다기능메모리를 다결정 실리콘을 이용하여 제작한다면 기판에 자유롭게 메모리 적용이 가능하고 추후 3차원 적층형 소자의 구현도 가능하기 때문에 다결정실리콘 기반의 메모리 구현은 필수적이라고 할 수 있겠다. 본 연구에서는 다결정실리콘을 이용한 channel recessed구조의 다기능메모리를 제작하였으며 각 1T-DRAM 및 NVM동작에 따른 memory 특성을 살펴보았다. 실험에 사용된 기판은 상부 비정질실리콘 100 nm, 매몰산화층 200 nm의 SOI구조의 기판을 이용하였으며 고상결정화 방법을 이용하여 $600^{\circ}C$ 24시간 열처리를 통해 결정화 시켰다. N+ poly Si을 이용하여 source/drain을 제작하였으며 RIE시스템을 이용하여 recessed channel을 형성하였다. 상부 ONO게이트 절연막은 rf sputter를 이용하여 각각 5/10/5 nm 증착하였다. $950^{\circ}C$ N2/O2 분위기에서 30초간 급속열처리를 진행하여 source/drain을 활성화 하였다. 계면상태 개선을 위해 $450^{\circ}C$ 2% H2/N2 분위기에서 30분간 열처리를 진행하였다. 제작된 Poly Si MFM에서 2.3V, 350mV/dec의 문턱전압과 subthreshold swing을 확인할 수 있었다. Nonvolatile memory mode는 FN tunneling, high-speed 1T-DRAM mode에서는 impact ionization을 이용하여 쓰기/소거 작업을 실시하였다. NVM 모드의 경우 약 2V의 memory window를 확보할 수 있었으며 $85^{\circ}C$에서의 retention 측정시에도 10년 후 약 0.9V의 memory window를 확보할 수 있었다. 1T-DRAM 모드의 경우에는 약 $30{\mu}s$의 retention과 $5{\mu}A$의 sensing margin을 확보할 수 있었다. 차후 engineered tunnel barrier기술이나 엑시머레이저를 이용한 결정화 방법을 적용한다면 device의 특성향상을 기대할 수 있을 것이다. 본 논문에서는 다결정실리콘을 이용한 다기능메모리를 제작 및 메모리 특성을 평가하였다. 제작된 소자의 단일 셀 내에서 NVM동작과 1T-DRAM동작이 모두 가능한 것을 확인할 수 있었다. 다결정실리콘의 특성상 단결정 SOI기반의 다기능 메모리에 비해 낮은 특성을 보여주었으나 이는 결정화방법, high-k절연막 적용 및 engineered tunnel barrier를 적용함으로써 해결 가능하다고 생각된다. 또한 sputter를 이용하여 저온증착된 O/N/O layer에서의 P/E특성을 확인함으로써 glass위에서의 MFM구현의 가능성도 확인할 수 있었으며, 차후 system on panel (SOP)적용도 가능할 것이라고 생각된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Mass Spectrometry Letters
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• v.7 no.1
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• pp.16-20
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• 2016

Characterization of intact protein structures in the gas phase using electrospray ionization combined with ion mobility mass spectrometry has become an important tool of research. However, the biophysical properties that govern the structures of protein ions in the gas phase remain to be understood. Here, we investigated the impact of host-guest complexation of ubiquitin (Ubq) with macrocyclic host molecules, cucurbit[n]urils (CB[n]s, n = 6, 7), on its structure in the gas phase. We found that CB[n] complexation induces the formation of compact Ubq ions. Both CB[6] and CB[7] exhibited similar effects despite differences in their binding properties in solution. In addition, CB[n] attachment prevented Ubq from unfolding by collisional activation. Based on the experimental results, we suggest that CB[n]s prevent unfolding of Ubq during transfer to the gas phase to promote the formation of compact protein ions. Furthermore, interaction with positively charged residues per se is suggested to be the most important factor for the host-guest complexation effect.