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Study of Composite channel Structure of Metamorphic HEMT for the Improved Device Characteristics  

Choi, Seok-Gyu (MINT, Millimeter-wave INovation Technology research center)
Baek, Yong-Hyun (MINT, Millimeter-wave INovation Technology research center)
Han, Min (MINT, Millimeter-wave INovation Technology research center)
Bang, Seok-Ho (MINT, Millimeter-wave INovation Technology research center)
Yoon, Jin-Seob (Department of computer aided system, Seoil College)
Rhee, Jin-Koo (MINT, Millimeter-wave INovation Technology research center)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.12, 2007 , pp. 1-6 More about this Journal
Abstract
In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.
Keywords
MHEMT; InP-Composite channel; Impact ionization;
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