Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Study of Composite channel Structure of Metamorphic HEMT for the Improved Device Characteristics

기존의 MHEMT와 InP 합성 채널 MHEMT의 소자의 항복 특성 분석 및 비교 연구

  • Choi, Seok-Gyu (MINT, Millimeter-wave INovation Technology research center) ;
  • Baek, Yong-Hyun (MINT, Millimeter-wave INovation Technology research center) ;
  • Han, Min (MINT, Millimeter-wave INovation Technology research center) ;
  • Bang, Seok-Ho (MINT, Millimeter-wave INovation Technology research center) ;
  • Yoon, Jin-Seob (Department of computer aided system, Seoil College) ;
  • Rhee, Jin-Koo (MINT, Millimeter-wave INovation Technology research center)
  • 최석규 (동국대학교 전자공학과 밀리미터파 신기술 연구센터) ;
  • 백용현 (동국대학교 전자공학과 밀리미터파 신기술 연구센터) ;
  • 한민 (동국대학교 전자공학과 밀리미터파 신기술 연구센터) ;
  • 방석호 (동국대학교 전자공학과 밀리미터파 신기술 연구센터) ;
  • 윤진섭 (서일대학 컴퓨터전자과) ;
  • 이진구 (동국대학교 전자공학과 밀리미터파 신기술 연구센터)
  • Published : 2007.12.25
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Abstract

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

본 논문에서 기존에 사용하고 있는 metamorphic high electron transistor (MHEMT)의 채널에 InP를 추가하여 제작 하였다. InP는 In0.53Ga0.47As와 비교하여 낮은 충돌 이온화 계수를 가지고 있다. 그런 특성을 MHEMT의 문제점 중의 하나인 낮은 항복전압의 개선에 이용하였다. 우리는 기존의 MHEMT와 InP 합성 채널 MHEMT의 항복 특성과 주파수 특성을 비교 하였다. 본 논문에서 InP 합성 채널 MHEMT의 on-state와 off-state 항복전압이 각각 2.4와 5.7 V가 측정 되었고 또한 cut-off 주파수와 maximum oscillation 주파수는 각각 160 GHz와 230 GHz가 측정 되었다. 위의 결과는 InP 합성 채널 MHEMT가 밀리미터파 대역의 전력용 소자에 이용되는데 큰 장점을 갖는 소자임을 알 수 있다.

Keywords

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