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Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer  

Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.11, no.2, 2012 , pp. 53-57 More about this Journal
This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.
Millimeter wave; HEMT; Metamorphic HEMT (MHEMT); Device simulation; Hydrodynamic transport simulation; Design of Epitaxial layers; Cutoff frequency; Maximum oscillation frequency; Breakdown;
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Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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