• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.10
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• pp.2123-2135
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• 1997

In this paepr, we consider resistive shorts on drain-source, drain-gate, and gate-source as well as opens in MOSFETs included in typical memory cell of VLSI SRAM. Behavior of memeory is observed by analyzing voltage at storage nodes of memeory and IDDQ(quiescent power supply current) through PSPICE simulation. Using this behavioral analysis, an effective testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ testing simultaeously is proposed. Built-In Self Test(BIST) circuit which detects faults in memories and Built-In Current Sensor(BICS) which monitors the power supply bus for abnormalities in quescent current are developed and imprlemented to improve the quality and efficiency of testing. Implemented BIST and BICS circuits can detect locations of faults and defects in order to repair faulty memories.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.351-354
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• 2000

In the past, we proposed an IDDQ testable design method for static CMOS PLA circuits. All bridging faults can be detected in NOR planes of our testable designed PLA circuits by IDDQ testing with 4 kinds of test input vectors which are independent of the logical functions to be realized. However, the testable designed PLA circuits consume large power in the normal operation. In this paper, a new IDDQ testable design method is proposed and evaluated by some experiments. The experimental results show that the PLA circuit designed with our method can work with low power consumption than the previous one.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.8
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• pp.49-63
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• 1997

This paper presents a current sensor that detects defects in CMOS integrated circuits using the current testing technique. The current sensor is built in a CMOS integrated circuit to test an abnormal current. The proposed circuit has a very small impact on the performance of the circuit under test during the normal mode. In the testing mode, the proposed circuit detects the abnormal current caused by permanent manufacturing defects and determines whether the circuit under test is defect-free or not. The proposed current sensor is simple and requires no external voltage and current sources. Hence, the circuit has less area and performance degradation, and is more efficient than any previous works. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects.

• The Magazine of the IEIE
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• v.23 no.4
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• pp.84-93
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• 1996

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.1
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• pp.235-244
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• 1999

This Paper proposes a new compaction algorithm for IDDQ testing in CMOS Circuits. A primary test pattern is generated by the primitive fault pattern which is able to detect GOS(gate-oxide short) and the bridging faults in an internal primitive gate. The new algorithm can reduce the number of the test vectors by decreasing the don't care(X) in the primary test pattern. The controllability of random number is used on processing of the backtrace together four ones of heuristics. The simulation results for the ISCAS-85 benchmark circuits show that the test vector reduction is more than 45% for the large circuits on the average compared to static compaction algorithms.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.8
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• pp.8-21
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• 1997

In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in MOS FETs included in typical memory cell of VLSI SRAM and analyze behavior of memory by using PSPICE simulation. Using conventional fault models and this behavioral analysis, we propose linear testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ (quiescent power supply current) testing simultaneously to improve functionality and reliability of memory. Finally, we implement BIST (built-in self tsst) circuit and BICS(built-in current sensor), which are embedded on memory chip, to carry out functional testing efficiently and to detect various defects at high-speed respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.1C
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• pp.96-102
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• 2002

Current testing(Iddq testing) on monitoring the quiescent power supply current is an efficient and effective method for CMOS bridging faults. The applicability of this technique, however, requires careful examination. Since cardinality of bridging fault is O($n^2$) and current testing requires much longer testing time than voltage testing, it is important to note that a bridging fault is untestable if the two bridged nodes have the same logic values at all times. Such faults should be identified by a good ATPG tool; otherwise, the fault coverage can become skewed. In this paper, we present an object-oriented redundant fault detection scheme for efficient current testing. Experimental results for ISCAS benchmark circuits show that the improved method is more effective than the previous ones.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.431-438
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• 2005

In this paper, we propose the built-in current testing circuit for improving reliability As the integrated CMOS circuits in a chip are increased, the testability on design and fabrication should be considered to reduce the cost of testing and to guarantee the reliability In addition, the high degree of integration makes more failures which are different from conventional static failures and introduced by the short between transistor nodes and the bridging fault. The proposed built-in current testing method is useful for detecting not only these failures but also low current level failures and faster than conventional method. In normal mode, the detecting circuit is turned off to eliminate the degradation of CUT(Circuits Under Testing). The differential input stage in detecting circuit prevents the degradation of CUT in test mode. It is expected that this circuit improves the quality of semiconductor products, the reliability and the testability.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.13-22
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• 1998

In this paper, we propose a high-performance BICS(built-in current sensor) which is fabricated in 0.8${\mu}{\textrm}{m}$ single-poly two-metal process for IDDQ testing of CMOS VLSI circuit. The CUT(circuit under test) is 4-bit full adder with a bridging fault. Using two nMOSs that have different size, two bridging faults that have different resistance values are injected in the CUT. And controlling a gate node, we experimented various fault effects. The proposed BICS detects the faulty current at the end of the clock period, therefore it can test a CUT that has a much longer critical propagation delay time and larger area than conventional BICSs. As expected in the HSPICE simulation, experimental results of fabricated chip demonstrated that the proposed BICS can exactly detect bridging faults in the circuit.