• Journal of Information Display
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• v.13 no.4
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• pp.139-143
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• 2012

In this study, optical simulation was used to compare three optical structures that could be applied to the typical organic light-emitting diode to increase the outcoupling efficiency. These were spherical scattering particles (treated as Mie scatterers) embedded in the glass substrate, microlenses formed on the glass substrate, and a diffusing layer (DL) with a Gaussian scattering distribution function inserted between the indium tin oxide (ITO) and the glass substrate. It was found that the application of microlens array and that of scattering particles in the glass substrate exhibited similar enhancements in the outcoupling efficiency when the density and the refractive index of the scattering particles were optimized. The DL located at the interface between the glass and the ITO further enhanced the efficiency because it could further extract the trapped light in the waveguide mode. The appropriate combination of these three structures increased the outcoupling efficiency to about 42%, which is much greater than the typical values of 15-20% when there is no optical structure for light extraction.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.208-211
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• 2012

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.49-51
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• 2006

OLEOs was fabricated by PLD method. Wet etching process and plasma treatment of ITO on the glass were performed to extend the lifetime of the OLED and increase its brightness. The NPB, $Alq_3$, Li-Benzoate and AI layers on ITO pattern on the glass were deposited by PLO method, sequentially. When the etched ITO was treated by $O_2$ plasma with RF power of 50W, the best result was obtained. The lifetime of the OLED treated by $O_2$ plasma was extended from 3,770sec to 12,586sec compared to that without the plasma treatment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.19.2-19.2
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• 2009

ITO는 n형 반도체 특성을 가지며 이와 동시에 높은 가시광투과율과 낮은 전기전도도를 가짐으로써 다양한 투명전극소재와 가스 검출센서로 많이 활용되고 있다. 본 연구에서는 RF magnetron sputtering 법을 이용하여 상온에서 glass 기판 위에 두께 100nm로 ITO 그리고 하층 ITO 박막 (두께 50 nm) 위에 층간 금속 (두께 5 nm)을 증착하고 다시 상부 ITO 박막 (두께 45 nm)을 증착하여 3층의 적층형 박막센서를 제작하였다. 층간 금속으로는 Au와 Cu를 각각 사용하였다. 박막 증착 후엔 진공분위기에서 $150^{\circ}C$, $300^{\circ}C$로 열처리 과정을 거쳐 열처리 전후의 물성 및 감지특성을 비교해보았다. 분석방법으로는 XRD, SEM, AFM, Hall effect 장치 등을 이용하였다. 분석 결과 $300^{\circ}C$에서 진공 열처리한 ITO/Au/ITO(IAI) 박막센서가 높은 결정화도 와 전기적 특성이 나타났으며, 0 에서 1000ppm 까지의 메탄가스의 민감도 측정에서도 열처리된 IAI 박막센서가 기존의 ITO 박막센서보다도 약 70% 정도 향상된 민감도를 나타내었다.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.128-129
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• 2004

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.352-357
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• 2015

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.272-278
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• 2003

We studied patterned ITO layers of PDP thin films on glass substrates using spectroscopic ellipsometry. The optical property of ITO is expressed with the optical model based on two Lorentz oscillators. The effect of patterned ITO is calculated by taking the weighted average of reflectance in proportion to ITO coverage. The relative coverage of ITO is determined by using the model analysis of spectroellipsometric data. The difference of ITO coverage obtained by the best-fit model analysis of ellipsometric spectra to the expected one is critically examined and suggestions are made to minimize the observed discrepancy.