• Journal of Construction Engineering and Project Management
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• v.1 no.1
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• pp.31-36
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• 2011

Construction materials usually constitute a major portion of the total cost in a building construction project. Materials management Is made problematic by materials shortages, delays in supply, price fluctuations, damage and wastage, and lack of storage space. Despite the potential benefit of ICT, convincing construction organisations to embrace its use and implementation has proved a difficult task. This study seeks to identify the implementation of ICT for materials management processes in construction projects. The findings from the case studies reveal that the implementation of ICT in the materials management processes for construction projects in Malaysia Is at early stage. Microsoft Excel Spreadsheet and handheld devices are found to be the common ICT tools adopted in the materials management processes. The main barrier is found to be the cost involvement at the initial stage or overall implementation of ICT in the materials management processes. Finally, this paper concludes the finding from interviews towards the ICT implementation of materials management in the construction projects.

• International conference on construction engineering and project management
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• 2011.02a
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• pp.195-200
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• 2011

Construction materials usually constitute a major portion of the total cost in a building construction project. Despite the potential benefit of ICT, convincing construction organisations to embrace its use and implementation has proved a difficult task. This study seeks to identify the implementation of ICT for materials management processes in construction projects. The findings from the interviews reveal that the implementation of ICT in the materials management processes for construction projects in Malaysia is at early stage. Microsoft Excel Spreadsheet and handheld devices are found to be the common ICT tools adopted in the materials management processes. The main barrier is found to be the cost involvement at the initial stage or overall implementation of ICT in the materials management processes. Finally, this paper concludes the finding from interviews towards the ICT implementation of materials management in the construction projects.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1760-1763
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• 2018

To attain power generation with body heat, the thermal resistance matched design of the thermoelectric generator was the principal factor which was not critical in the case of thermoelectric generator for the waste heat generation. The dimension of thermoelectric legs and the number of thermoelectric leg-pairs dependent output power performances of the thermoelectric generator on the human wrist condition was simulated using 1-dimensional approximated heat flow equations with the temperature dependent material coefficients of the constituent materials and the dimension of the substrate. With the optimum thermoelectric generator design, thermoelectric generator modules were fabricated by using newly developed fabrication processes, which is mass production possible. The electrical properties and the output power characteristics of the fabricated thermoelectric modules were characterized by using a home-made test set-up. The output voltage of the designed thermoelectric generator were a few tens of millivolts and its output power was several hundreds of microwatts under the conditions at the human wrist. The measured output voltage and power of the fabricated thermoelectric generator were slightly lower than those of the designed thermoelectric generator due to several reasons.

• ETRI Journal
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• v.39 no.1
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• pp.62-68
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• 2017

In this paper, we present the design and characterization analysis of a cascode GaN field-effect transistor (FET) for switching power conversion systems. To enable normally-off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement-mode Si metal-oxide-semiconductor FET and a high-BV depletion-mode (D-mode) GaN FET. This paper demonstrates a normally-on D-mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO-254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of $250{\mu}A$, and an on-resistance of $331m{\Omega}$. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.

• ETRI Journal
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• v.38 no.2
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• pp.235-243
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• 2016

A low-noise readout integrated circuit (ROIC) for a microelectromechanical systems (MEMS) microphone is presented in this paper. A positive feedback signal amplification technique is applied at the front-end of the ROIC to minimize the effect of the output buffer noise. A feedback scheme in the source follower prevents degradation of the noise performance caused by both the noise of the input reference current and the noise of the power supply. A voltage booster adopts noise filters to cut out the noise of the sensor bias voltage. The prototype ROIC achieves an input referred noise (A-weighted) of -114.2 dBV over an audio bandwidth of 20 Hz to 20 kHz with a $136{\mu}A$ current consumption. The chip is occupied with an active area of $0.35mm^2$ and a chip area of $0.54mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.4
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• pp.282-285
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• 2019

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• ETRI Journal
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• v.38 no.3
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• pp.469-478
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• 2016

In this paper, we investigate the effects of pre-reducing Sb-doped $SnO_2$ (ATO) electrodes in viologen-anchored $TiO_2$ (VTO) nanostructure-based electrochromic devices. We find that by pre-reducing an ATO electrode, the operating voltage of a VTO nanostructure-based electrochromic device can be lowered; consequently, such a device can be operated more stably with less hysteresis. Further, we find that a pre-reduction of the ATO electrode does not affect the coloration efficiency of such a device. The aforementioned effects of a pre-reduction are attributed to the fact that a pre-reduced ATO electrode is more compatible with a VTO nanostructure-based electrochromic device than a non-pre-reduced ATO electrode, because of the initial oxidized state of the other electrode of the device, that is, a VTO nanostructure-based electrode. The oxidation state of a pre-reduced ATO electrode plays a very important role in the operation of a VTO nanostructure-based electrochromic device because it strongly influences charge movement during electrochromic switching.

• ETRI Journal
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• v.41 no.1
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• pp.23-31
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• 2019

Since the late 20th century, there has been rapid development in the display industry. Only 30 years ago, we used big cathode ray tube displays with poor resolution, but now most people use televisions or smartphones with very high-quality displays. People now want images that are more realistic, beyond the two-dimensional images that exist on the flat screen, and digital holography-one of the next-generation displaysis expected to meet that need. The most important parameter that determines the performance of a digital hologram is the pixel pitch. The smaller the pixel pitch, the higher the level of hologram implementation possible. In this study, we fabricated the world-smallest $3-{\mu}m$-pixel-pitch holographic backplane based on the spatial light modulator technology. This panel could display images with a viewing angle of more than $10^{\circ}$. Furthermore, a comparative study was conducted on the fabrication processes and the corresponding holographic results from the large to the small pixel-pitch panels.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.