Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
Ahn, Ho-Kyun
(ICT Materials & Components Research Laboratory, ETRI)
Kim, Hae-Cheon (ICT Materials & Components Research Laboratory, ETRI) Kang, Dong-Min (ICT Materials & Components Research Laboratory, ETRI) Kim, Sung-Il (ICT Materials & Components Research Laboratory, ETRI) Lee, Jong-Min (ICT Materials & Components Research Laboratory, ETRI) Lee, Sang-Heung (ICT Materials & Components Research Laboratory, ETRI) Min, Byoung-Gue (ICT Materials & Components Research Laboratory, ETRI) Yoon, Hyoung-Sup (ICT Materials & Components Research Laboratory, ETRI) Kim, Dong-Young (ICT Materials & Components Research Laboratory, ETRI) Lim, Jong-Won (ICT Materials & Components Research Laboratory, ETRI) Kwon, Yong-Hwan (ICT Materials & Components Research Laboratory, ETRI) Nam, Eun-Soo (ICT Materials & Components Research Laboratory, ETRI) Park, Hyoung-Moo (Electronics and Electrical Engineering Division, Dongguk University) Lee, Jung-Hee (School of Electrical Engineering and Computer, Kyoungpook National University) |
1 | M.A. Khan et al., "High Electron Mobility Transistor Based on a Heterojunction," Appl. Physics Lett., vol. 63, no. 9, Aug. 1993, pp. 1214-1215. DOI |
2 | W. Chang et al., "Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation," ETRI J., vol. 38, no. 1, Feb. 2016, pp. 133-140. DOI |
3 | J. Cheron et al., "High-Efficiency Power Amplifier MMICs in 100 nm GaN Technology at Ka-Band Frequencies," European Microw. Integr. Circuits Conf., Nuremberg, Germany, Oct. 6-8, 2013, pp. 492-495. |
4 | J.C. Jeong et al., "A Compact C-Band 50-W AlGaN/GaN HighPower MMIC Amplifier for Radar Applications," ETRI J., vol. 36, no. 3, June 2014, pp. 498-501. DOI |
5 | C.F. Campbell, M. Kao, and S. Nayak, "High Efficiency Ka-Band Power Amplifier MMICs Fabricated with 0.15 GaN on SiC HEMT Process," IEEE MTT-S Int. Microw. Symp. Digest, Montreal, Canada, June 17-22, 2012, pp. 1-3. |
6 | K. Takagi et al., "GaN HEMTs with Pre-match for Ka-Band with 18 W," IEEE MTT-S Int. Microw. Symp. Digest, Maltimore, MD, USA, June 5-10, 2011, pp. 1-4. |
7 | T. Palacios et al., "High-Power AlGaN/GaN HEMTs for Ka-Band Applications," IEEE Electron Device Lett., vol. 26, No. 11, Nov. 2005, pp. 781-783. DOI |
8 | M.Y. Kao et al., "AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-function MMIC Applications," IEEE/MTT-S Int.Microw. Symp., June 3-8, 2007, pp. 627-629. |
9 | Nidhi et al., "N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Application," IEEE Electron Device Lett., vol. 31, no. 12, Nov. 2010, pp. 1437-1439. DOI |
10 | Y. Cai et al., "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Trans. Electron Devices, vol. 53, no. 9, Sept. 2006, pp.2207-2215. DOI |
11 | R. Chu et al., "1200 V Normally-off GaN-on-Si Field-Effect Transistors with Low Dynamic On-resistance," IEEE Electron Device Lett., vol. 32, no. 5, May 2011, pp. 632-634. DOI |
12 | Y. Cai et al., "High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Lett., vol. 26, no. 7, 2005, pp. 435-437. DOI |
13 | M. Sun et al., "Comparative Breakdown Study of Mesa- and IonImplantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate," Appl. Physics Express, vol. 5, no. 7, July 2012, pp. 074202-1-074202-5. DOI |
14 | S.J. Yun et al., "Etching Characteristics of Thin Films in Inductively Coupled /Ar Plasma," Vacuum, vol. 82, no. 11, June 2008, pp. 1198-1202. DOI |
15 | D.P. Kim, J.W. Yeo, and C.I. Kim, "Etching Properties of Films in Inductively Coupled Plasma," Thin Solid Films, vol. 459, July 2004, pp. 122-126. DOI |
16 | K. Kolari et al., "High Etch Selectivity for Plasma Etching with AlN and Masks," Microelectronic Eng., vol. 85, May 2008, pp. 985-987. DOI |
17 | S. Rennesson et al., "Optimization of High Electron Mobility Heterostructures for High-Power/Frequency Performances," IEEE Electron Device Lett., vol. 60, no. 10, Nov. 2013, pp. 3105-3111. DOI |
18 | R. Lossy et al., "Gallium Nitride MIS-HEMT Using Atomic Layer Deposited as a Gate Dielectric," J. Vacuum Sci. Technol. A, vol. 31, no. 1, Feb. 2013, pp. 01A140-1-01A140-5. DOI |
19 | B. Lu, M. Sun, T. Palacios, "An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors," IEEE Electron Device Lett., vol. 34, no. 3, Mar. 2013, pp. 369-371. DOI |
20 | C. Chen et al., "Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors with Fluorated as Gate Dielectrics," Appl. Physics Lett., vol. 100, 2012, pp. 133507-1-133507-2. DOI |
21 | Q. Zhou et al., "Schottky Source/Drain /InAlN/GaN MISHEMT with steep Sub-threshold Swing and High ON/OFF Current Ratio" IEEE Int. Electron Device Meeting, Washington, DC, USA, Dec. 5-7, 2011, pp. 33.4.1-33.4.4. |
22 | D.K. Kim et al., "Performance of AlGaN/GaN MISHFET Using Dual-Purpose Thin Layer for Surface Protection and Gate Insulator," Solid-State Electron., vol. 100, Oct. 2014, pp. 11-14. DOI |
23 | Y. Zhang et al., "Threshold Voltage Control by Gate Oxide Thickness in Fluorinated GaN Metal-Oxide-Semiconductor High-Rlectron-Mobility Transistors" Appl. Physics Lett., vol. 103, no. 3, 2013, pp. 033524-1-033524-2. DOI |
24 | C. Chen et al., "Fabrication of Enhancement-Mode AlGaN/GaN MISFETs by Using Fluorinated as Gate Dielectrics," IEEE Electron Device Lett., vol. 32, no. 10, Oct. 2011, pp. 1373-1375. DOI |
25 | Y.H. Wang et al., "6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack," IEEE Electron Device Lett., vol. 36, no. 4, Apr. 2015, pp. 381-383. DOI |
26 | S.M. Sze, Physics of Semiconductor Devices. 3rd ed. New York, USA: Wiley, 2006, pp. 227-229. |
27 | J. Chung et al., "AlGaN/GaN HEMT with 300-GHz ," IEEE Electron Device Lett., vol. 31, no. 3, Nov. 2010, pp. 195-197. DOI |
28 | D.K. Schroder, Semiconductor Material and Device Characterization. 3rd ed. New York, USA: Wiley, 2006, pp. 704-705. |
29 | T. Palacios et al., "Optimization of AlGaN/GaN HEMTs for High Grequency Operation," Physics Status. Solidi (a), vol. 203, no. 7, May 2006, pp. 1845-1850. DOI |
30 | M. Marso et al., "Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs," IEEE Trans. Electron Devices, vol. 53, no. 7, July 2006, pp. 1517-1523. DOI |