Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Deposition Pressure Dependent Electric Properties of (Hf,Zr)O2 Thin Films Made by RF Sputtering Deposition Method

  • Moon, S.E. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Kim, J.H. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Im, J.P. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Lee, J. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Im, S.Y. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Hong, S.H. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Kang, S.Y. (ICT Materials Research Group, Electronics and Telecommunications Research Institute) ;
  • Yoon, S.M. (Advanced Materials Engineering for Information & Electronics, Kyung Hee University)
  • Received : 2018.11.09
  • Accepted : 2018.11.13
  • Published : 2018.11.30
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Abstract

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

Keywords

Acknowledgement

Grant : Development of neuromorphic hardware using high performance memristor device based on hyper-thin lm structure, Development of Basic Technologies for 3D Photo-Electronics

Supported by : Electronics and Telecommunications Research Institute (ETRI), National Research Council of Science & Technology (NST)

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