• Journal of Magnetics
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• 제21권2호
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• pp.222-228
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• 2016

Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.438-440
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• 1995

The impedance characteristics and plasma parameters were experimentally studied in a weakly magnetized planar type, inductively coupled plasma (ICP) system. Compared with non-magnetized for system higher power transfer efficiency, stable impedance matching, enhancement of plasma density and higher electron temperature can be obtained. Such improvements are mainly due to the excitation of deeply penetrating electromagnetic wave and reduction of radial loss of electrons. In particulary, $SF_6$ (sulfur hexafluride) plasma shows unstable impedance matching in non-magnetized ICP because electronegativity of $SF_6$ effects on plasma characteristics. But, magnetized inductively coupled $SF_6$ plasma shows enough impedance matching stability to be applicable to the polysilicon etching in semiconductor process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.81-86
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• 2006

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with 0.3~1.2 mm, number of turns with 4~12 turns, distance with 40~120 mm and RF power with 10~150 W, the electrical and optical properties were measured. When diameter of coil was 0.3 mm, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• 한국세라믹학회지
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• 제51권5호
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• 한국표면공학회지
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• 제45권3호
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• pp.123-129
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• 2012

Nanocrystalline CrN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 500 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has an significant influence on coating microstructure and mechanical properties of CrN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain size of CrN coatings were decreased from 11.7 nm to 6.6 nm with increase of ICP power. The maximum nanohardness of 23.0 GPa was obtained for the coatings deposited at ICP power of 500 W. Preferred orientation in CrN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• 대한화학회지
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• 제41권6호
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• pp.292-298
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• 1997

유도코일을 5회 감고, 외측 석영관 길이를 일반적인 ICP(Inductively Coupled Plasma) 토오치에서 보다 50 mm 더 길게 제작한 수평형 ICP 방출원을 제작한 후, ICP 방출분광분석기를 구성하였다. 신호대 잡음비 및 바탕선의 세기를 고주파 출력, 시료 유량, 알곤가스 유량 그리고 차단가스 유량변화에 대하여 측정하고 최적조건을 구했다. 이들 조건에서,수직형 플라스마와 비교하여 분광분석학적으로 비슷한 정도의 특징을 가진 바탕선 스펙트럼을 파장범위 200~500 nm에서 얻었다. 납(II), 220.35 nm의 방출선에서 검출한계가 11 ppb로 산출되었으며, 수직형과 비교하여 약 5배 낮은 값을 보였다.

• 한국표면공학회지
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• 제48권5호
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• pp.205-210
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• 2015

NbN coatings were prepared by ICP (inductively coupled plasma) assisted magnetron sputtering from a Nb metal target in $Ar+N_2$ atmosphere at various ICP powers. Effect of ICP on the microstructure, crystalline structure and mechanical properties of NbN coatings was investigated by field emission electron microscopy, X-ray diffraction, atomic force microscopy and nanoindentation measurements. The results show that ICP power has a significant influence on coating microstructure, structure and mechanical properties of NbN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Crystalline structure of NbN coatings were changed from cubic ${\delta}$-NbN to hexagonal ${\beta}-Nb_2N$ with increase of ICP power. The maximum nano hardness of 25.4 GPa with Ra roughness of 0.5 nm was obtained from the NbN coating sputtered at ICP power of 200 W.

• Bulletin of the Korean Chemical Society
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• 제22권2호
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• pp.159-163
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• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.98-98
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• 2000

초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

• 한국표면공학회지
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• 제43권2호
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.