• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.85-88
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• 2001

This paper suggests an improved switch architecture for the rechargeable battery protection IC. In the existing protection IC, charging and discharging switches composed of the CMOS transistor and the diode are external components. It is difficult to integrate the switches in a CMOS process due to the large chip-size overhead and inevitable parasitic effects. In this paper, we propose a new switch architecture of the MOSFET's 'diode connection' method. The performance and chip-size overhead are proved to be adequate for the fully integrated protection IC.

• Journal of Mechanical Science and Technology
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• v.18 no.3
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• pp.357-369
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• 2004

The purposes of the paper are to analyze the fracture phenomenon by delamination and cracking when the encapsulant of plastic IC package with polyimide coating shows viscoelastic behavior under hygrothermal loading in the IR soldering process and to suggest more reliable design conditions by the approaches of stress analysis and fracture mechanics. The model is the plastic SOJ package with the polyimide coating surrounding chip and dimpled diepad. On the package without cracks, the optimum position and thickness of polyimide coating to decrease the maximum differences of strains at the bonding surfaces of parts of the package are studied. For the model delaminated fully between the chip and the dimpled diepad, C(t)-integral values are calculated for the various design variables. Finally, the optimal values of design variables to depress the delamination and crack growth in the plastic IC package are obtained.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1069-1072
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• 1998

Recently the development of design and automation technology and manufacturing method, has reduced the cost of chip, but it becomes more difficult to test IC chip because test technique doesn't keep up with these techniques. In case of IC testing, obtaining test vectors to be able to detect good chip or bad one is very important, but according to increasing complexity, it is very complex and difficult. Another problem is that during testing, there could be capability of physical and electrical damage on chip. Also there is difficulty in synchronization between CUT (circuit under test) and Test equipment〔1〕. Because of these difficulties, built in self test has been proposed. Not only obtaining test vectors but also reducing test time becomes hot issues nowadays. This paper presents a new test BIST(built in self test) method. Proposed BIST implementation reduces test time and obtains high fault coverage. By searching internal nodes in which are inserted test_point_cells〔2〕and allocating TPG(test pattern generation) stages, test length becomes much shorter.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.1
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• pp.34-41
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• 1998

In this paper, I designed a P1394 serial bus chip as new bus interface architecture which can transmit the multimedia data at the rate of 400 Mbps and guarantee necessary bandwidth. because multimedia data become meaningless data after appropriate time, it is necessary to transfer multimedia data in real time, P1394 serial bus chip designed in this paper support isochronous transfer mode to solve this problem. Also, designed P1394 serial bus chip can transfer high quality video data or high quality audio data because it support the speed of 400 Mbps. While user must set device ID manually in previous interface such as SCSI, device ID is automatically determined if user connect each node with designed P1394 serial bus cable and power on. To design this chip, I verified the behavioral of the entrire system and synthesized layout. Also, I did layout the analog blocks and blocks which must be optimized in full custom.

• Journal of IKEEE
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• v.20 no.4
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• pp.428-431
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• 2016

Power semiconductor devices had been producted with bipolar only processes, but Bipolar-CMOS-DMOS(BCD) processes have been adapted recently to fabricate these devices since most foundry companies have provided BCD processes instead of Bipolar only processes. In this study, Regulator and OP Amp are used as most popular design IPs and BCD processes for the designing are converted from bipolar only processes. Power Switching Sensor(PSS) ICs are designed specifically and fabricated on a silicon chip. The operation results of the packaged chip show the good matching with test results of the simulation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1695-1702
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• 2001

This paper describes a design of CMOS infrared (IR) wireless data link IC which can be used in IrDA(Infrared Data Association) application from 4 Mb/s to 100 Mb/s The implemented chip consists of variable gain transimpedance amplifier which has a gain range from 60 dB to 100 dB, AGC (automatic gain control) circuits, AOC(automatic offset control) loop, 4 PPM (pulse position modulation) modulator/demodulator and DLL(delay locked loops). This infrared optical link If was implemented using commercial 0.25 um 1-poly 5-metal CMOS process. The chip consumes 25 mW at 100 Mb/s with 2.5 V supply voltage excluding buffer amplifier. The die area of prototype IC is 1.5 mm $\times$ 1 mm.

• Journal of the Korean Society for Nondestructive Testing
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• v.12 no.4
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• pp.18-25
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• 1993

This paper is to aim the microdefect evaluation of If package into a quantitative from NDI's image processing of ultrasonic wave. (1) Automatically repeated discrimination analysis method can be devided in the category of all kind of defects on IC package, and also can be possible to have a sampling of partial delamination. (2) It is possible that the information of edge section in silicon chip surrounding can be extractor by the partial image processing of IC package. Also, the crack detection is possible between the resin part and lead frame.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.445-453
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• 2015

A fully integrated cost-effective and low-power single chip Lithium-Ion (Li-Ion) battery protection IC (BPIC) for portable devices is presented. The control unit of the battery protection system and the MOSFET switches are integrated in a single package to protect the battery from over-charge, over-discharge, and over-current. The proposed BPIC enters into low-power standby mode when the battery becomes over-discharged. A new auto release function (ARF) is adopted to release the BPIC from standby mode and safely return it to normal operation mode. A new delay shorten mode (DSM) is also proposed to reduce the test time without increasing pin counts. The BPIC implemented in a $0.18-{\mu}m$ CMOS process occupies an area of $750{\mu}m{\times}610{\mu}m$. With DSM enabled, the measured test time is dramatically reduced from 56.82 s to 0.15 s. The BPIC chip consumes $3{\mu}A$ under normal operating conditions and $0.45{\mu}A$ under standby mode.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.1-7
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• 1999

A single RF transceiver evaluation board have been developed for the purpose of application to the 900MHz band transceiver contained RF-IC chip And environment test was evaluated. The RF-IC chipset includes LNA(Low Noise Amplifier), down-conversion mixer, AGC(Automatic Gain Controller), switched capacitor filter and down sampling mixer. The RF evaluation board for the testing of chipset contained various external matching circuits, filters such as RF/IF SAW(Surface Acoustic Wave) filter and duplexer and power supply circuits. With the range of 2.7~3.3V the operated chip revealed moderate power consumption of 42mA. The chip was well operated at the receiving frequency of 925~960MHz. Measurement result is similar to general RF receiving specification of the 900MHz digital mobile phone.