• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.479-482
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• 2004

We report a method for simultaneous measurements of cell gap, twist angle, birefringence dispersion of liquid crystal (LC) material and alignment directions in filled reflective LC cells. The method is based on spectral measurements of the LC cell reflectivity for three orientations ($0^{\circ},45^{\circ},90^{\circ}$) of the exit polarizer and may be applied for LC cells with low and high gaps.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Smart Structures and Systems
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• 제33권3호
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• pp.227-241
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• 2024

Safety and structural integrity of civil structures, like bridges and buildings, can be substantially enhanced by employing appropriate structural health monitoring (SHM) techniques for timely diagnosis of incipient damages. The information gathered from health monitoring of important infrastructure helps in making informed decisions on their maintenance. This ensures smooth, uninterrupted operation of the civil infrastructure and also cuts down the overall maintenance cost. With an early warning system, SHM can protect human life during major structural failures. A real-time online damage localization technique is proposed using only the vibration measurements in this paper. The concept of the 'Degree of Scatter' (DoS) of the vibration measurements is used to generate a spatial profile, and fractal dimension theory is used for damage detection and localization in the proposed two-phase algorithm. Further, it ensures robustness against environmental and operational variability (EoV). The proposed method works only with output-only responses and does not require correlated finite element models. Investigations are carried out to test the presented algorithm, using the synthetic data generated from a simply supported beam, a 25-storey shear building model, and also experimental data obtained from the lab-level experiments on a steel I-beam and a ten-storey framed structure. The investigations suggest that the proposed damage localization algorithm is capable of isolating the influence of the confounding factors associated with EoV while detecting and localizing damage even with noisy measurements.

• 한국자동차공학회논문집
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• 제3권2호
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• pp.51-61
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• 1995

A coast down test mothod has been used to determine the resistance forces on running vehicle due to the aerodynamic drag, rolling resistance and driveline resistance. Most of the tests, however, are based on the Velocity-Time measurements, which require a sophisticated velocity measuring device and contain much error by nature. In the present study a coast down test method based on Distance-Time measurements is introduced, which contains the original idea of Russian scientist Prof. Petrushov along with the suggestions for improvement of the accuracy.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2107-2111
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• 2023

The aim of the study is the activity concentration measurements of organic and inorganic ¹⁴C in the discharges of JSC "Institute of Nuclear Materials" (INM). In INM the research water-water reactor "IVV-2M" is operating. Collecting of ¹⁴C species was performed using a ¹⁴C sampler with a chromium oxide and platinum catalysts at different temperatures: 400, 550 and 700 ℃. The measurements of ¹⁴C activity were performed using a liquid scintillation counter. The share of organic ¹⁴C in emissions ranged from 0.30 to 0.84 and depends on the temperature of the catalyst, core structure and reactor operating mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.167-170
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• 1998

The electrical characteristics of Stearic acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films. The deposition status of LB films were verified by the measurements of UV absorbance and I-V characteristics. The conductivity of Stearic acid LB films at room temperature was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity was found to increase as the temperature was increased. The acitivation energy was about 1[eV].

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• 전기학회논문지
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• 제64권12호
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.