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A Study on the Reliability of Ru-Zr Metal Gate with Thin Gate Oxide  

이충근 (한국항공대학교 항공전자공학과)
서현상 (한국항공대학교 항공전자공학과)
홍신남 (한국항공대학교 전자.정보통신.컴퓨터)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.4, 2004 , pp. 208-212 More about this Journal
Abstract
In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.
Keywords
Gate Metal; Co-sputtering; Work function; Ru; Zr;
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