1 |
Y. Taur, D. A. Buchanan, W. Chen, D. J. Frank, K. E. Ismail, S. H. Lo, G. A. Sai-Halasz, R. G. Viswanathan, H. J. Wann, S. J. Wind, and H. S. Wong, 'CMOS Scaling into the Nanometer Regime,' Proceedings of the IEEE, Vol. 85, No. 4, pp. 486-504, April 1997
DOI
ScienceOn
|
2 |
Semiconductor Industry Association, 'International technology roadmap for semiconductors,' 2000 update
|
3 |
R. Lin, Q. Lu, P. Ranade, T. J. King, and C. Hu, 'An Adjustable Work Function Technology Using Mo Gate for CMOS Devices,' IEEE Electron Device Letters, Vol. 23, No. 1, pp. 49-51, January 2002
DOI
ScienceOn
|
4 |
Y. C. Yeo, Q. Lu, P. Ranade, H. Takeuchi, K. J. Yang, I. Polishchuk, T. J. King, C. Hu, S. C.Song, H. F. Luan, and D. L. Kwong, 'Dual-Metal Gate CMOS Technology with Ultrathin Silicon Nitride Gate Dielectric,' IEEE Electron Device Letters, Vol. 22, No. 5, pp. 227-229, May 2001
DOI
ScienceOn
|
5 |
H. Zhong, G. Heuss, and V. Misra, 'Electical Properties of Gate Electrodes for Dual Metal Gate Si-CMOS,' IEEE Electron Device Letters, Vol. 21, No. 12, pp. 593-595, December 2000
DOI
ScienceOn
|
6 |
V. Misra, H. Zhong, and H. Lazar, 'Electrical Properties of Ru-Based Alloy Gate Electrodes for Dual Metal Gate Si-CMOS,' IEEE Electron Device Letters, Vo. 23, No. 6, pp. 354-356, June 2002
DOI
ScienceOn
|
7 |
I. De, D. Johri, A, Srivastava, and C. M. Osburn, 'Impact of gate workfunction on device performance at the 50nm technology node,' Soild-State Electronics, 44, pp. 1077-1080, 2000
DOI
ScienceOn
|
8 |
K. Mahdouk, K. Elaissaoui, J. Charles, L. Bouirden, and J. C. Gachon, 'Calorimetric study and optimization of the ruthenium zirconium phase diagram,' Intermetallics, Vol. 5, No. 2, pp. 111-116, 1997
DOI
ScienceOn
|
9 |
J. R. Hauser and K. Ahmed, 'Characterization fo Ultrathin Oxides Using Electrical C-V and I-V measurements,' Gaithersburg, MD: Nat. Inst. Stand. Technol., 1998
|
10 |
V. Misra, G. Heuss, and H. Zhang, 'Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with ,' Applied Physics Letters, Vol. 78, No. 26, pp. 4166-4168, June 2001
DOI
ScienceOn
|
11 |
J. E. Suarez, B. E. Johnson, and B. El-Kareh, 'Thermal Stability fo Polysilicon Resistors,' Electronic Components and Technology Conference Proceedings 41st, pp. 537-543, 1991
DOI
|
12 |
W. C. Lee and C. Hu, 'Mideling Gate and Substrate Currents due to Conduction and Valence-Band Electron and Hole Tunneling,' Symposium on VLSI Technology Digest of Technical papers, pp. 198-199, 2000
DOI
|
13 |
K. Ino, T. Ushiki, K. Kawai, I. Ohshima, T. Shinohara, and T. Ohmi, 'Highly-Reliable Low-Resistivity bcc-Ta Gate MOS Technology Using Low-Damage Xe-Plasma Sputtering and Si-Encapsulated Silicidation Process,' Symposium on VLSI Technology Digest of Technical Papers, pp. 186-187, 1998
DOI
|