• Membrane Journal
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• v.17 no.1
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• pp.37-43
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• 2007

The effect of anionic and cationic exchange polymer layer on the chronopotentiometry (CP) and current voltage curves (I-V) of charged composite membrane are investigated. Also, the ion transport near the interface between electrolyte and ionic exchange polymer membranes (anionic and cationic ones) and charged mosaic polymer composite membrane is studied. The results show that both anionic and cationic polymer exchange membranes exhibit lower voltage drop over range of applied current density and possess favorable industrial application potentials, especially at low KCl concentration. While the charged mosaic polymer composite membrane didn't show any current-voltage change, irrespective to the type and the concentration of used electrolyte. CP and I-V measurements are effectively used to give some fundamental understanding for ion transport behavior of ion exchange polymer membrane near the interlace.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.929-935
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• 2005

This paper contains a review of methods to analise static and dynamic properties of trap states in TFTs. The Gap Density of States is extracted from C-V and I-V characteristics. Switch on transients and small signal ac measurements are used in conjunction with simulation and an analytic model to extract traps dynamic parameters.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1020-1025
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• 1995

The Schottky barrier hieght(SBH) of Au/n-Si(100) were investigated by current-voltage(I-V) and capacitance voltage(C-V) measurement within a temperature range of l00K∼300K. The values of SBH at room temperature obtained from these two measurements were (0.79${\pm}$0.02)eV. The SBH obtained from the C-V measurement was temperature independent, while that obtained from the I-V measurement decreased linearly with decreasing temperature. This indicates that the Schottky diode has deviated from the thermionic emission theory at low-temperature, Thus, other current transport processes were considered and the contribution of recombination current was dominant at low temperature. We found that it leads to a lower SBH value. Thus, the conflicating results between C-V and I-V measurement were explained, C-V measurement is believed to yield mare reliable SBH values in present study since it is not affected by the current transport uncertainties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.125-131
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• 2023

Ga₂O₃ thin films were deposited on Ti substrates using metal organic chemical vapor deposition (MOCVD) at temperatures ranging from 350 to 500℃. Lower deposition temperatures were chosen to minimize thermal deformation of the Ti substrate and its impact on the Ga₂O₃ film. Film surfaces tended to become rough at temperatures below 500℃ due to three-dimensional growth, but the film formed at 500℃ had the most uniform surface. All deposited films were amorphous in structure. Vertical Schottky diodes were fabricated and I-V and C-V measurements were performed. I-V measurements showed higher operating voltages compared to a typical SBD for films grown at different temperatures. The sample grown at 500℃, which had the most uniform surface, exhibited the lowest operating voltage. Higher growth temperatures resulted in higher capacitance values according to C-V measurements.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.70-71
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• 2007

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.384-390
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• 2011

To evaluate the condition of stator winding insulation in generators that have been operated for a long period of time, diagnostic tests were performed on the stator bars of a 500 MW, 22 kV generator under accelerated thermal and electrical aging procedures. The tests included measurements of AC current (${\Delta}I$), dissipation factor ($tan{\delta}$), partial discharge (PD) magnitude, and capacitance (C). In addition, the AC current test was performed on the stator winding of a 350 MW, 24 kV generator under operation to confirm insulation deterioration. The values of ${\Delta}I$, ${\Delta}tan{\delta}$, and PD magnitude in one stator bar indicated serious insulation deterioration. In another stator bar, the ${\Delta}I$ measurements showed that the insulation was in good condition, whereas the values of ${\Delta}tan{\delta}$ and PD magnitude indicated an incipient stage of insulation deterioration. Measurements of ${\Delta}I$ and PD magnitude in all three phases (A, B, C) of the remaining generator stator windings showed that they were in good condition, although the ${\Delta}tan{\delta}$ measurements suggested that the condition of the insulation should be monitored carefully. Overall analysis of the results suggested that the generator stator windings were in good condition. The patterns of PD magnitude in all three phases (A, B, C) were attributed to internal discharge.

• Journal of the Korean Chemical Society
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• v.63 no.6
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• pp.427-434
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• 2019

The role of hydrophobic residues on protein folding reaction was studied by folding kinetics measurements in conjunction with protein engineering. The HubWA, which was derived from human ubiquitin by mutating the residues at 45 (Phe to Trp) and 26 (Val to Ala), was used as a mutational background. Fourteen hydrophobic residues were mutated to alanine. Among fourteen variants generated, only four variant proteins (V5A, I13A, V17A, and I36A) were suitable for folding study. The folding kinetics of these variants was measured by stopped-flow fluorescence spectroscopy. The folding kinetics of HubWA and V17A was observed to follow a three-state on-pathway mechanism. On the other hand, folding kinetics of V5A, I13A, and I36A was observed to follow a two-state mechanism. Based on these observations, transition of protein folding reaction from collision-diffusion mechanism to nucleation-condensation mechanism was discussed.