• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.963-968
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• 2000

Magnetic properties and microstructures of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were investigated as a function of addition of element Ag, (X$\_$Ag/=0 to 6 at.%) and annealing temperature, T$\_$a/=300$\^{C}$ to 600$\^{C}$. In the case of adding Ag, magnetic properties of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were improved than those of Ag-free Fe$\_$93/Zr$_3$B$_4$thin films. The prominent soft magnetic properties with coercivity of 1.1 Oe, saturation magnetization of 2.2 T and permeability of 5400 at 50㎒ were obtained from Fe$\_$88/Zr$_3$B$_4$Ag$\_$5/ thin film annealed was lower than that of Fe-base or Co-base thin films reported previously. Such enhanced magnetic properties are presumably attributed to the format in ultra fine grains. Also, the reduced eddy current loss in the annealed sample is due to refined micro magnetic domains with increasing the amount of Ag in Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films.

• Journal of Adhesion and Interface
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• v.10 no.2
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• pp.98-105
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• 2009

Poly(amic acid) was synthesized from the reaction of p-PDA/ODA and PMDA/BPDA and silane oligomer containing epoxy group was also synthesized from the reaction of tetramethylorthosilicate (TMOS) and glycidol. After hybridizing poly (amic acid) and silane oligomer, they were effectively converted into polyimide/silica hybrid films by thermal imidization process. As the silica contents in hybrid films increased, CTE values decreased from 17 ppm/K to 10 ppm/K and the tensile modulus increased, in spite of decreasing tensile strength. In addition, the peel test showed that the adhesion strength of hybrid film was enhanced from $0.43kg_f/cm$ to $1.02kg_f/cm$. Therefore, it could be concluded that the polyimide/silica hybrid film is effective to enhance adhesion strength for FCCL films.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.122-127
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• 2003

Ti - Si - N hard films were deposited on SKD11 steel substrates by a hybrid deposition system, where TiN was deposited by AIP method while Si was incorporated by sputtering one. The microstructure of Ti-Si-N films was revealed to be a composite of TiN crystallites and amorphous Si3N4 by instrumental analyses. The highest hardness value of about 45 Gpa was obtained at the Si content of around 7.7 at.%. With increase of Si content, the size of TiN crystallites was reduced and their distribution was changed from aligned to randomly orientated states. Surface roughness of Ti-Si-N film also decreased with increase of Si content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.315-318
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• 2001

The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Elastomers and Composites
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• v.45 no.4
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• pp.298-308
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• 2010

The mechanical properties and surface characteristics of parylene thin film were improved using Xylydene-based dimers (DPX-C, DPX-D, and DPX-N). A single-parylene-C, D, N film and a hybrid chemical and physical parylene thin films in which two types are mixed were manufactured for each dimer by adjusting the deposition conditions and the thickness of the thin film by input. Parylene was deposited by chemical vapor deposition (CVD) and the thermal characteristics of the single thin film and the hybrid thin film were compared by thermal analysis. The mechanical properties of the thin films were characterized by tensile strength, elongation, and tear force tests, and the surface characteristics of the thin films were evaluated by contact angle and surface energy measurements. The hybrid chemical parylene thin film in which two types are mixed can complement the strengths and weaknesses of the different dimers, while the physical parylene thin film can freely adjust the thin film characteristics of the coated surface and the opposite surface.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.388-394
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• 2014

Inorganic-organic hybrid coating solutions were synthesized using titania sol from titanium isopropoxide (TTIP) as an inorganic component and mixture of two or three types of silane coupling agents, such as methacryloxypropyl trimethoxysilane (MPTMS), aminopropyl triethoxysilane (APS), glycidoxypropyl trimethoxysilane (GPTMS) and vinyltriethoxysilane (VTES) as an organic component. The hard coating films were obtained by spin-coating on the polycarbonate sheets and curing the inorganic-organic hybrid coating solutions. The coating films made from the mixture of two types of silane coupling agents showed poor pencil hardness and adhesion, while those from the mixture of three types of silane coupling agents exhibited an improved pencil hardness of 2H~4H and adhesion of 5B. The refractive indexes of coating films were increased from 1.56 to 1.63 at 550 nm by increasing the content of titania sols from 20 to 30 g.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.1 no.1
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.