• Journal of Communications and Networks
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• v.6 no.3
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• pp.216-225
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• 2004

In a cellular network, if there are too many data users in a cell, data may suffer long delay, and system's quality-of-service (QoS) will degrade. Some traditional schemes such as dynamic channel-allocation scheme (DCA) will assign more channels to hot (or overloaded) cells through a central control system (CC) and the throughput increase will be upper bounded by the number of new channels assigned to the cell. In mobile-assisted data forwarding (MADF), we add an ad-hoc overlay to the fixed cellular infrastructure and special channels-called forwarding channels- are used to connect mobile units in a hot cell and its surrounding cold cells without going through the hot cell's base station. Thus, mobile units in a hot cell can forward data to other cold cells to achieve load balancing. Most of the forwarding-channel management work in MADF is done by mobile units themselves in order to relieve the load from the CC. The traffic increase in a certain cell will not be upper bounded by the number of forwarding channels. It can be more if the users in hot cell are significantly far away from one another and these users can use the same forwarding channels to forward data to different cold neighboring cells without interference. We find that, in a system using MADF, under a certain delay requirement, the throughput in a certain cell or for the whole net-work can be greatly improved.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11a
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• pp.403-408
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• 1996

The subchannel analysis was performed to verify the behavior of hot channel characteristics and obtain the information to support the core thermal-hydraulic behavior at post-trip steam line break with low flow condition. During this postulated accident, buoyancy-induced cross flow occurs, and the coupled nuclear and thermal-hydraulic interactions become important. The code predictions with TORC are in good agreement with the test data. Under such conditions, the mass flow increase in the hot channel by buoyancy-induced cross flow depends on the parameter $GR^{*}\;/\;Re^2$, and buoyancy effect becomes more noticeable as $GR^{*}\;/\;Re^2$ increases.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.49-56
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• 1993

In this paper, we present a new lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and substrate current influence. The suggested model is applied to a different channel structured PMOSFET, dgm/gm of both SC-PMOSFET and BC-PMOSFET appear with one straigth line about Qbib, therefore, this model is independent of channel structure. The suggested model is applied to a different drain structured SC-PMOSFET. Unlike S/D structured SC-PMOSFET, dgm/gm of LDD structured SC-PMOSFET appears with one straight line about Qb, therefore, this model is dependent of drain structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.94-100
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• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.157-163
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• 2002

A new flash EEPROM device with p^＋ poly-Si control gate and n^＋ poly-Si floating side gate was fabricated and characterized. The n^＋ poly-Si gate is formed on both sides of the p^＋ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.9
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• pp.30-37
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• 1993

In this paper, we present a simple and general lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and gate current influence to solve a problem that that I$_{b}$ is dependent on drain structure. The suggested model is applied to a different channel, drain structured PMOSFET. For all PMOSFETs, dg$_{m}$/g$_{m}$ of PMOSFET appears with one straight line about Q$_{g}$, therefore, this model using I$_{g}$ is consistent with experiment result independently of channel, drain structure. It is, therefore, proposed that a model using I$_{g}$ has a general applicability for PMOSFET's.

• Journal of information and communication convergence engineering
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• v.4 no.2
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.1
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• pp.82-89
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• 2017

In this work, InGaZnO thin film transistors with Ni, Al and ITO source and drain electrode materials were fabricated to analyze a hot carrier induced device degradation according to the electrode materials. From the electrical measurement results with electrode materials, Ni device shows the best electrical performances in terms of mobility, subthreshold swing, and $I_{ON}/I_{OFF}$. From the measurement results on the device degradation with source and drain electrode materials, Al device shows the worst device degradation. The threshold voltage shifts with different channel widths and stress drain voltages were measured to analyze a hot carrier induced device degradation mechanism. Hot carrier induced device degradation became more significant with increase of channel widths and stress drain voltages. From the results, we found that a hot carrier induced device degradation in InGaZnO thin film transistors was occurred with a combination of large channel electric field and Joule heating effects.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.1888-1893
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• 2007

In this study, the microchannel plated heat exchanger were numerically studied for the enhancement of heat transfer in the channel configuration. Unit cold and hot fluid region with the microchannel were modeled and periodic boundary condition at the side wall was applied to continuously repeating geometry. The material of micro-structured plate is STS304 and working fluid is water. Triangular obstacles were placed in micro channel to enhance heat transfer. The performance of microchannel plated heat exchangers were numerically investigated with various obstacle configuration and Reynolds number under the parallel and counter flows. Heat transfer rate has increased about 18% compared with straight channel, but pressure drop also increased about 3.5 times. The main factor of increasing of pressure drop and heat transfer rate is considered that the momentum was lost to collide against obstacles, generation of secondary flow and boundary layer separation, wake and vortex forming phenomena.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1140-1144
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• 2005

A plastic-based CE (capillary electrophoresis) microchip was fabricated by hot embossing process. A Si mold was made by wet etching process and a PMMA wafer was cut off from 1mm thick PMMA sheet. A micro-channel structure on PMMA substrate was produced by hot embossing process using the Si mold and the PMMA wafer. A vacuum assisted thermal bonding procedure was employed to seal an imprinted PMMA wafer and a blank PMMA wafer. The results of microscopic cross sectional images showed dimensions of channels were well preserved during thermal bonding process. In our procedure, the deformation amount of bonding process was below 1%. The entire fabrication process may be very useful for plastic based microchip systems.