[KSCI] Korea Science Citation Index Service

A New EEPROM with Side Floating Gates Having Different Work Function from Control Gate

Youngjoon Ahn (Department of Electrical Engineering and Computer Science, KAIST)
Sangyeon Han (Department of Electrical Engineering and Computer Science, KAIST)
Kim, Hoon (Department of Electrical Engineering and Computer Science, KAIST)
Lee, Jongho (School of Electrical Engineering, Wonkwang University)
Hyungcheol Shin (Department of Electrical Engineering and Computer Science, KAIST)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.2, no.3, 2002 , pp. 157-163 More about this Journal

Abstract

A new flash EEPROM device with $p^＋$ poly-Si control gate and $n^＋$ poly-Si floating side gate was fabricated and characterized. The $n^＋$ poly-Si gate is formed on both sides of the $p^＋$ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

Keywords

EEPROM; flash memory; MDSFET; hot carrier injection; direct tunneling;

Citations & Related Records

Reference

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