• Korean Journal of Materials Research
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• v.8 no.9
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• pp.802-806
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• 1998

polyimide를 입힌 SiO2 wafer상에 증착된 알루미늄 박막의 두께 및 소둔 여부에 따른 hillock의 거동을 atomic force microscopy (AFM)을 이용하여 분석하였다. 증착된 상태의 박막에서 성장 hillock이 관찰되었으며 박막 두께가 증가할수록 hillock의 크기는 증가한 반면 밀도는 감소하였다. 소둔 후 hillock의 평균 크기는 증가하였으나 밀도는 감소하였다. 이러한 hillock 밀도의 감소는 견고한 wafer상에 직접 증착된 알루미늄 박막에서와 다르다. 이는 유연한 polymide 박막에 의한 응력 완화로 응력유기 입계확산이 이루어지지 않아 hillock 이 추가로 형성되지 않은 상태에서 큰 hillock이 성장하면서 작은 hillock을 흡수하기 때문으로 판단된다.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.183-188
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• 2005

본 논문은 대면적 LCD 기판에서의 hillock 의 특성 및 억제 방법을 제안한다. pure-Al 의 thickness 에 따른 hillock의 발생개수는 감소 하며 size는 증가하는 경향을 나타낸다. 이는 pure-Al 의 grain size가 thickness에 따라 증가하며 즉 grain size가 커질 수 록 발생 hillock의 size는 증가 한다는 것을 알 수 있다. hillock 억제 방안으로 Mo capping을 제안 하며 이에 대한 Modeling 및 효과 파악 결과 pure-Al $2500{\AA}$에 Mo $500{\AA}$ capping시 pure-Al의 hillock을 억제 한다는 신뢰성 있는 결과를 얻을 수 있었다 이에 대한 이론적 Modeling은 Chaudhari's Model을 modify하여 사용 하였다. 그 외 sputter온도에 따라 hillock 발생 개수가 증가 함을 관찰 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.55-59
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• 2003

In this study, $Al_xTa_{1-x}$(x=0.0∼1.0) alloy thin films were grown by RF-Magnetron sputtering system, and the structural, mechanical and electrical properties of samples were examined by 4-point probe, XRD, AFM and micro-Vickers hardness profiler. The electrical resistivity was maximum and the crystal quality was optimum for the samples with Al content x=0.245 (Al 24.5 at.%). Regarding the surface hillock formation, the hillock density decreased with an increase of Al content for the low Al content range, and the hillock was eliminated for the sample with Al=24.5 at.%. The hillock density increased with the further increase of Al content. The high values of micro-Vickers hardness were obtained for the samples with x=0.2∼0.45. The results obtained demonstrate that the crystal quality, electrical resistivity, surface morphology and micro-hardness are closely inter-related, and that the optimum physical properties are obtained for the sample with x=0.245.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.25-30
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• 2007

The in-situ scanning electron microscopy observation of real-time hillock evolution in pure hi thin films on glass substrate during Isothermal annealing was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation by in-situ scanning electron microscopy observation ana the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.32.1-32.1
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• 2006

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.438-443
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• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.225-228
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• 2005

The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.207.1-207
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• 2002

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.55-63
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• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.