Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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In-situ Analysis on the Effect of Mo Underlayer on Hillock Formation Behavior in Al Thin Films

Al 박막의 힐록 형성에 미치는 Mo 하부층의 영향에 관한 실시간 분석

  • Lee, Yong-Duck (School of Materials Science and Engineering, Andong National University) ;
  • Hwang, Soo-Jung (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Je-Hun (LCD R&D Center, LCD Business, Samsung Electronics) ;
  • Joo, Young-Chang (School of Materials Science and Engineering, Seoul National University) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • Published : 2007.01.27
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Abstract

The in-situ scanning electron microscopy observation of real-time hillock evolution in pure hi thin films on glass substrate during Isothermal annealing was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation by in-situ scanning electron microscopy observation ana the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

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References

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