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http://dx.doi.org/10.3740/MRSK.2007.17.1.025

In-situ Analysis on the Effect of Mo Underlayer on Hillock Formation Behavior in Al Thin Films  

Lee, Yong-Duck (School of Materials Science and Engineering, Andong National University)
Hwang, Soo-Jung (School of Materials Science and Engineering, Seoul National University)
Lee, Je-Hun (LCD R&D Center, LCD Business, Samsung Electronics)
Joo, Young-Chang (School of Materials Science and Engineering, Seoul National University)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Korean Journal of Materials Research / v.17, no.1, 2007 , pp. 25-30 More about this Journal
Abstract
The in-situ scanning electron microscopy observation of real-time hillock evolution in pure hi thin films on glass substrate during Isothermal annealing was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation by in-situ scanning electron microscopy observation ana the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.
Keywords
in-situ SEM; hillock; stress relaxation; Al thin film; Mo underlayer;
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