• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.860-865
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• 2006

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.34-43
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• 2024

New piezoelectric and triboelectric materials for energy harvesting are being widely researched to reduce their processing cost and complexity and to improve their energy conversion efficiency. In this study, BaTiO₃ films of various thickness were deposited on Ni foams by R.F. magnetron sputtering to study the piezoelectric and triboelectric properties of the porous spongy structure materials. Then piezoelectric nanogenerators (PENGs) were prepared with spongy structured BaTiO₃ and PDMS composite. The output performance exhibited a positive dependence on the thickness of the BaTiO₃ film, pushing load, and poling. The PENG output voltage and current were 4.4 V and 0.453 ㎂ at an applied stress of 120 N when poled with a 300 kV/cm electric field. The electrical properties of the fabricated PENG were stable even after 5,000 cycles of durability testing. The triboelectric nanogenerators (TENGs) were fabricated using spongy structured BaTiO₃ and various polymer films as dielectrics and operated in a vertical contact separation mode. The maximum peak to peak voltage and current of the composite film-based triboelectric nanogenerator were 63.2 V and 6 ㎂, respectively. This study offers new insights into the design and fabrication of high output nanogenerators using spongy structured materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.939-943
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• 2011

In this paper, reliability of the two sandwiched MIM capacitors of $Al_2O_3-HfO_2-Al_2O_3$ (AHA) and $SiO_2-HfO_2-SiO_2$ (SHS) with hafnium-based dielectrics was analyzed using two kinds of voltage stress; DC and AC voltage stresses. Two MIM capacitors have high capacitance density (8.1 fF/${\mu}m^2$ and 5.2 fF/${\mu}m^2$) over the entire frequency range and low leakage current density of ~1 nA/$cm^2$ at room temperature and 1 V. The charge trapping in the dielectric shows that the relative variation of capacitance (${\Delta}C/C_0$) increases and the variation of voltage linearity (${\alpha}$/${\alpha}_0$) gradually decreases with stress-time under two types of voltage stress. It is also shown that DC voltage stress induced greater variation of capacitance density and voltage linearity than AC voltage stress.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.219-226
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• 2013

Organic semiconductor-based soft electronics has potential advantages for next-generation electronics and displays, which request mobile convenience, flexibility, light-weight, large area, etc. Organic field-effect transistors (OFET) are core elements for soft electronic applications, such as e-paper, e-book, smart card, RFID tag, photovoltaics, portable computer, sensor, memory, etc. An optimal multi-layered structure of organic semiconductor, insulator, and electrodes is required to achieve high-performance OFET. Since most organic semiconductors are self-assembled structures with weak van der Waals forces during film formation, their crystalline structures and orientation are significantly affected by environmental conditions, specifically, substrate properties of surface energy and roughness, changing the corresponding OFET. Organo-compatible insulators and surface treatments can induce the crystal structure and orientation of solution- or vacuum-processable organic semiconductors preferential to the charge-carrier transport in OFET.

• Journal of IKEEE
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• v.12 no.3
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• pp.131-137
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• 2008

A silicon Fabry-Perot tunable thermo-optic filter for WDM using the thin film silicon coating is proposed and experimented. The filter is implemented by using the CMP process and polishing both sides of the commercial silicon wafer with normal thickness of 100${\mu}m{\pm}$1%. The filter also has 2-layer or 3-layer dielectrics thin film coating mirror which are alternated ${\lambda}$/4 layers of $SiO_2$($n_{low}$=1.44) and a-Si($n_{high}$=3.48) for the central wavelength of 1550nm by RF sputtering. The experiment shows that FSR is 3.61nm and FWHM is 0.56nm and the finesse is 6.4 for 2-layer mirror with the reflection of 61%, and that FSR is 3.36nm and FWHM is 0.13nm and the finesse is 25.5 for 3-layer mirror with the reflection of 89%. According to thermo-optic effect, the transmitted central wavelength of 1549.73nm at $23^{\circ}C$ is shifted to 1550.91nm at $30^{\circ}C$ and 1553.46nm at $60^{\circ}C$ for 2-layer mirror, and the transmitted central wavelength of 1549.83nm at $23^{\circ}C$ is shifted to 1550.92nm at $30^{\circ}C$ and 1553.07nm at $60^{\circ}C$ for 3-layer mirror.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.1
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• pp.39-45
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• 2005

As a basic research for the development of a non-invasive blood glucose sensor using millimeter waves, we have presented a method for measuring the dielectric properties of high loss dielectrics, based on the reflection method, and investigated the variation of the dielectric properties of glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range. In the proposed method, a minimal reflection condition is formed by placing a specially-chosen low-loss plane-parallel plate in front of a high-loss medium under test at a given frequency range. Using the minimal power reflection coefficient and the corresponding frequency at this condition, tile dielectric properties of the medium can be determined. The measured results on pure water have shown the adequacy of the proposed method. The measured results on glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range showed that the variations of the dielectric properties of glucose solutions according to the change of their glucose concentration were maximum in the 30～45 GHz range. From these facts we concluded that the variation of about 3 mole/L in the glucose solutions must be distinguished With the measurement accuracies of ±0.1 dB and ±0.01 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.407-410
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• 2018

As the operating frequency of an electromagnetic wave increases, the maximum output and wavelength of the wave decreases, so that the size of the circuit cannot be reduced. As a result, the fabrication of a circuit with high power (of the order of or greater than kW range) and terahertz wave frequency band is limited, due to the problem of circuit size, to the order of ${\mu}m$ to mm. In order to overcome these limitations, we propose a source design technique for 0.1 THz~0.3 GW level with cylindrical shape (diameter ~2.4 cm). Modeling and computational simulations were performed to optimize the design of the high-power electromagnetic sources based on Cherenkov radiation generation technology using the principle of plasma wakefield acceleration with ponderomotive force and artificial dielectrics. An effective design guideline has been proposed to facilitate the fabrication of high-power terahertz wave vacuum devices of large diameter that are less restricted in circuit size through objective verification.

• Journal of the Korean Applied Science and Technology
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• v.27 no.2
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• pp.137-143
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• 2010

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.