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http://dx.doi.org/10.12925/jkocs.2010.27.2.6

Study on the Low-temperature process of zinc oxide thin-film transistors with $SiN_x$/Polymer bilayer gate dielectrics  

Lee, Ho-Won (Dept. of Information Display, Hongik University)
Yang, Jin-Woo (Dept. of Information Display, Hongik University)
Hyung, Gun-Woo (Dept. of Materials Science and Engineering, Hongik University)
Park, Jae-Hoon (Dept. of Electrical, Information and Control Engineering, Hongik University)
Koo, Ja-Ryong (Dept. of Information Display, Hongik University)
Cho, Eou-Sik (Dept. of Electronics Engineering, Kyungwon University)
Kwon, Sang-Jik (Dept. of Electronics Engineering, Kyungwon University)
Kim, Woo-Young (School of Display Engineering, Hoseo University)
Kim, Young-Kwan (Dept. of Information Display, Hongik University)
Publication Information
Journal of the Korean Applied Science and Technology / v.27, no.2, 2010 , pp. 137-143 More about this Journal
Abstract
Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.
Keywords
ZnO transistor; Low temperature process; C-PVP; Flexible substrate; ALD;
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Times Cited By KSCI : 1  (Citation Analysis)
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