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A High Tunable Capacitor Embedding Its Electrodes in Tunable Thin Film Dielectrics  

Lee Young-Chul (Division of Marine Electronics and Communication Engineering, Mokpo National Maritime University)
Hong Young-Pyo (Division of Marine Electronics and Communication Engineering, Ajou University)
Ko Kyung-Hyun (Division of Marine Electronics and Communication Engineering, Ajou University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.17, no.9, 2006 , pp. 860-865 More about this Journal
Abstract
In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.
Keywords
BZN Thin Film; Tunable Inter-Digital Capacitor;
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1 Y. Yoshiaki et al., 'Reconfigurable RF circuit design for multi-band wireless chip', IEEE Asia-Pacific Conference on Advanced System Integrated Circuits, pp. 418-419, 2004
2 P. Andreani, S. Mattisson, 'On the use of MOS varactors in RF VCO's', IEEE J. Solid-State Circuits, vol. 35, no. 6, pp. 905-910, Jun. 2000   DOI   ScienceOn
3 Kung-Hao Liang, Chien-Chih Ho, Chin-Wei Kuo, and Yi-Jen Chan, 'A 1.3-V 5-mW fully integrated tunable bandpass filter at 2.1 GHz in 0.35-_mCMOS', IEICE Transaction on Electron., vol. E88-C, no. 12, pp. 2372-2376, 2005   DOI
4 Altug Oz, K. F. Gary, 'RF CMOS-MEMS capacitor having large tuning range', IEEE International Conference on Solid State Sensors, Actuators and Microsystems, pp. 851-854, 2003
5 M. Rajarshi et al., 'Reconfigurable RFICs in sibased technologies for a compact intelligent RF front end', IEEE Trans. on Microwave Theory and Techniques, vol. 53, no. 1, pp. 81-93, 2005   DOI   ScienceOn
6 Mossaab Ouaddari et al., 'Microwave characterization of ferroelectric thin-film materials', IEEE Trans. on MTT, vol. 53, no. 4, pp. 1390-1397, 2005   DOI   ScienceOn
7 C. C. Hsiao, C. W. Kuo, and Y. J. Chan, 'Improved quality-factor of 0.18-_m CMOS active inductor by a feedback resistance design', IEEE Microw. Compon. Lett., vol. 12, no. 12, pp. 467-469, Dec. 2002   DOI   ScienceOn
8 Ralf Kakerow et al., 'Reconfigurable receiver approch for 4G terminals and beyond', IEEE New CAS Conference, pp. 9-12, 2005
9 R. Mukhopadhyay et al., 'Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications', IEEE MTT-s International Microwave Symposium, pp. 1489-1492, 2004
10 Ali Tombak et al., 'Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors', IEEE Trans. on Microwave Theory and Techniques, vol. 51, no. 2, pp. 462-467, 2003   DOI   ScienceOn