• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.87-94
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• 2001

A soft error rate for DRAM was predicted in connection with the leakage current in cell capacitor. The charge in cell capacitor was decreased during the DRAM operation, and soft error retes due to the leakage current were calculated in various operation mode of DRAM. It was found that the soft error rate of the /bit mode was dominant with small leakage current, but as increasing the leakage current memory mode shown the dominant effect on soft error rate. Using the 256M grade DRAM structure it was predicted that the soft error rate was influenced by the change of the cell capacitance, bit line capacitance, and the input voltage sensitivity of sense amplifier, and these results can be used to the design of the optimum cells in the next generation DRAM development.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.238-244
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• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

• Elastomers and Composites
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• v.54 no.1
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• pp.1-6
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• 2019

In this study, we measured the leakage current at $30{\sim}80^{\circ}C$ and $90{\sim}170^{\circ}C$ under a voltage of 200~980 V applied to samples (ordinary temperature) and polyamide film specimens degraded at $170^{\circ}C$ for 20 minute respectively. After the specimen was degraded at $130^{\circ}C$ and $50^{\circ}C$, a voltage of 200 to 800 V was applied for 10 to 60 minutes. The measurement of the leakage current resulted in the following conclusions. In the case of using Al and Cu as the main electrode, it was confirmed that the leakage current also increased in high temperatures as the voltage increased. Regardless of the type of main electrode, when the temperature was constant at $130^{\circ}C$ and $50^{\circ}C$, the leakage current increased as the voltage increased, and gradually decreased with time. As a result of the FTIR measurement, the main absorption of the infrared absorption spectrum was C=O at about $1650cm^{-1}$ and N-H diagonal vibration occurred at around $1550cm^{-1}$. There was no change in the material, so no effect of temperature was observed. By the results of SEM measurements, as the temperature of degradation increases, cracks in the specimen disappear. This may be because the amide bond (-CO-NH-) is absorbed by the material.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1740-1742
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• 1998

This paper describes the technique of deterioration diagnosis for ZnO element. Due to the non-linear resistance of ZnO block, the total leakage current contains harmonics when arrester deteriorated. The most significant harmonics is the 3rd order component. So, it can be used as an indicator of the arrester condition. An iron core, which has a very high relative permeability, is used for increasing detection sensitivity and the 3th order harmonics of leakage current was detected by band-pass circuit. And we have verified the reliability and performance of the sensing device through several laboratory tests.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.182-189
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• 2001

In this paper, the distribution suspension porecelain insulators which had been used for long periods in the contaminated area were evaluated. The contaminated area is close to the sea and in the high density of industries. The heavily contaminated domestic and imported insulators were investigated by using electrical characteristics, such as power-frequency dry flashover voltage, power-frequency wet, flahover voltage, and leakage current. Also, these electrical results were compared with the contaminants on the surface. From these analysis, we found that the contamination from the industrial dust, only slightly decreased flashover voltage and increased leakage current. Therefore, the electrical properties of insulators used for 30 years in the area of coast and industrial complex were not much changed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.514-519
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• 2007

The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.25-27
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• 2006

This paper proposes a new full ZVS-range asymmetrical half bridge converter. It uses the variable transient current build-up technique with the load variations. The current build-up is accomplished by using the secondary synchronous switch control. Due to the blocking capacitor in secondary side, the voltage applied to leakage inductor varies with the load variations during current build-up period. Therefore, the unnecessary current build-up of leakage inductor current in heavy load condition is prevented and more current build-up in medium and light load condition is achieved for ZVS operation. That is, the variant current build-up with the load variation is accomplished for the ZVS operation. Furthermore, the DC offset of the transformer magnetizing current is also eliminated and the utilization of magnetic core is maximized.

• Journal of Power Electronics
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• v.15 no.3
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• pp.587-601
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• 2015

A high step-up dc-dc converter is proposed for photovoltaic power systems in this paper. The proposed converter consists of an input current doubler, a symmetrical switched-capacitor doubler and an active-clamp circuit. The input current doubler minimizes the input current ripple. The symmetrical switched-capacitor doubler is composed of two symmetrical quasi-resonant switched-capacitor circuits, which share the leakage inductance of the transformer as a resonant inductor. The rectifier diodes (switched-capacitor circuit) are turned off at the zero current switching (ZCS) condition, so that the reverse-recovery problem of the diodes is removed. In addition, the symmetrical structure results in an output voltage ripple reduction because the voltage ripples of the charge/pump capacitors cancel each other out. Meanwhile, the voltage stress of the rectifier diodes is clamped at half of the output voltage. In addition, the active-clamp circuit clamps the voltage surges of the switches and recycles the energy of the transformer leakage inductance. Furthermore, pulse-width modulation plus phase angle shift (PPAS) is employed to control the output voltage. The operation principle of the converter is analyzed and experimental results obtained from a 400W prototype are presented to validate the performance of the proposed converter.