Ferroelectric and leakage current characteristics of Pt/SBT/Pt capacitors with post annealing process

후속 열처리에 따른 Pt/SBT/Pt 캐패시터의 강유전 특성과 누설전류 특성

  • 권용욱 (홍익대학교 공과대학 금속·재료공학과) ;
  • 박주동 (홍익대학교 공과대학 금속·재료공학과) ;
  • 연대중 (홍익대학교 공과대학 금속·재료공학과) ;
  • 오태성 (홍익대학교 공과대학 금속·재료공학과)
  • Published : 1999.08.01

Abstract

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

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