• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.39 no.12
• /
• pp.559-565
• /
• 2002

Today, because a quality factor of the inductor fabricated on silicon substrate for RFIC is under 12, the realization of inductor haying high-Q is essential. In this paper, two inductors having improved Q-factor are proposed and fabricated using a bondwire on silicon substrate. Also for the PGS is applied to the same inductors, four inductors are fabricated finally The bondwire Inductors have the relatively low conductor loss due to wide cross-section area and they can reduce the parastic capacitance very much because they are located in the air. Simulation and measurement results show that the proposed inductors have much more improved Q-factor, 15, than a conventional spiral inductor at 1.5 GHz. Because of the use of an automatic bonding machine, we can fabricate the high - Q inductors very easily, repeatedly.

• Journal of Advanced Navigation Technology
• /
• v.19 no.3
• /
• pp.244-249
• /
• 2015

High-altitude electromagnetic pulse (HEMP) is generated from a nuclear burst at high altitudes above the Earth, the electromagnetic fields reach the ground nearly simultaneously with regard to the operation time of systems. The aim of this analysis is to inquire about HEMP characteristics and to analyze about effect in orthogonal frequency division multiplexing (OFDM) system. Specifically, HEMP characteristics are classified field sources, spatial coverage, time domain behavior, frequency spectrum and field intensities in this study. Bits error rate (BER) of the receiver with the software simulation is confirmed for the HEMP effect. Q-factor made a difference about interference duration by transfer characteristics of system. When Q factor is smaller, the recovery time from HEMP interference is short. To the contrary, if the Q factor is larger, the recovery duration is lasted longer by 300-600%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.10
• /
• pp.877-882
• /
• 2016

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

• Journal of Power Electronics
• /
• v.1 no.2
• /
• pp.117-126
• /
• 2001

A synchronous motor(SM) with q-axis special field winding of which the q-axis field-current compensates and cancels armature reaction can be driven at unity power factor under the conditions of transient state as well as steady state. The motor operates in high efficiency in all conditions. However, in order to obtain maximum performance of the motor, it is required that the time constant of armature circuit corresponds to that of q-axis field circuit. Inverse LQ(ILQ) design method on a basis of the pole assignment is suitable for this problem:(1) The time constants of the output responses can be designed for desired specifications, (2) Relations between feedback gains and response of closed loop system are very clear and (3) Optimal solutions can be given by simple procedure of ILQ method without solving the Ricaati's equation, compared to the usual LQ design method. Accordingly, the ILQ method can make the responses of armature current and q-axis field-current correspond. In this paper, it is proved by numerical simulations and experiments that the ILQ method is very effective for optimal regulator design of this plant and realizes a high-performance motor with unity power factor and high efficiency.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2013.04a
• /
• pp.528-532
• /
• 2013

In this study, an analytical model of micro-beam structure including thermoelastic damping with irregularly distributed masses is investigated. The significance of thermoelastic damping for micro-scale mechanical resonators is evaluated to design -with high quality factor(Q-factor). The beam model of this work is based on Euler-Bernoulli beam theory. In order to determine the natural frequency of the model, energy method is applied. Also, the thermoelatic damping effects are considered by using heat conduction equations, and the Q-factor can be determined. To derive the equation of motion, non-dimensionalization is employed for systematic analysis. Results of the model are verified, and present mode shapes and Q-factors for the micro-beam with thermoelastic damping including random point masses.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.3
• /
• pp.311-320
• /
• 2008

In this paper, a new variable active inductor using a conventional grounded active inductor with feedback variable LC-resonator is proposed. The grounded active inductor is realized by the gyrator-C topology and the variable LC-resonator is realized by the low-Q spiral inductor and varactor. This variable LC-resonator can compensate the degradation of Q-factor due to parasitic capacitance of a transistor, and the frequency range with high Q-factor is adjustable by resonance frequency adjustment of LC-resonator. The fabricated variable active inductor with Magnachip $0.18{\mu}m$ CMOS process shows that high-Q frequency range can be adjusted according to varactor control voltage from 4.66 GHz to 5.45 GHz and Q-factor is higher than 50 in the operating frequency ranges. The measured inductance at 4.9GHz can be controlled from 4.12 nH to 5.97 nH by control voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.12
• /
• pp.1049-1055
• /
• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.245-248
• /
• 1997

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.

• Progress in Superconductivity and Cryogenics
• /
• v.23 no.4
• /
• pp.6-9
• /
• 2021

Superconducting coplanar waveguide (SCPW) resonators with high quality (Q) factor are widely used for developing quantum sensors and quantum information processors. Here we conducted numerical simulations of SCPW resonators to investigate the relationship between the Q factor and the coupling capacitance of the resonator. Varying the geometrical shape of both ends and coupling parameters of the SCPW resonator resulted in a change of the coupling capacitances and the Q factor as well. Our calculation results indicate that the performance of the SCPW resonator is highly sensitive to the capacitive coupling and searching for an optimal coupling condition would be crucial for developing high-performance SCPW resonator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.344-345
• /
• 2006

In this study, in order to develop low temperature sintering piezoelectric transformer, $(Pb_{0.99-x}Ca_xSr_{0.01})Ti_{0.96}(Mn_{1/3}Sb_{2/3})_{0.04}O_3$ ceramic systems were fabricated using $Na_2CO_3-Li_2CO_3$ as sintering aids and investigated with the amount of Ca substitution. The piezoelectric transformer requires high electromechanical coupling factor $k_t$ and high mechanical quality factor $Q_{mt}$ for generating high output power At the ($PbCaSr)Ti(MnSb)O_3$ ceramics with 24mol% Ca substitution sintered at $900^{\circ}C$, electromechanical coupling factor $k_t$ and mechanical quality factor $Q_{mt}$ showed the optimal values of 0.504 and 1655 respectively, for thickness vibration mode multilayer piezoelectric transformer application.