The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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CMOS Symmetric High-Q 2-Port Active Inductor

높은 Q-지수를 갖는 대칭 구조의 CMOS 2 단자 능동 인덕터

  • Koo, Jageon (Division of Electonics and Information Engineering and IT Convergence Research Center, Chonbuk National University) ;
  • Jeong, Seungho (Division of Electonics and Information Engineering and IT Convergence Research Center, Chonbuk National University) ;
  • Jeong, Yongchae (Division of Electonics and Information Engineering and IT Convergence Research Center, Chonbuk National University)
  • 구자건 (전북대학교 전자정보공학부 및 IT융합연구센터) ;
  • 정승호 (전북대학교 전자정보공학부 및 IT융합연구센터) ;
  • 정용채 (전북대학교 전자정보공학부 및 IT융합연구센터)
  • Received : 2016.07.08
  • Accepted : 2016.09.16
  • Published : 2016.10.31
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Abstract

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

본 논문에서는 LC 공진회로를 이용한 2 단자 능동 인덕터를 제안한다. 제안된 회로는 기존 자이레이터 구조의 1 단자 능동 인덕터들을 캐스코드 형태로 결합하였으며, 두 자이레이터 사이에 LC 공진회로를 추가시켰다. LC 공진회로는 능동 인덕터를 구성하는 트랜지스터의 기생 성분들을 상쇄시킴으로써 넓은 대역에서 높은 Q-지수를 제공한다. 제안된 회로는 삼성전자 65 nm 공정을 이용하여 시뮬레이션과 제작을 수행하였으며, 1~6 GHz 대역에서 2 nH의 일정한 인덕턴스와 40 이상의 높은 Q-지수를 가진다.

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References

  1. R. Sharman, A. K. A'ain, M. Azmi, and H. M. Zhe, "Design approach for tunable CMOS active inductor", Semiconductor Electronics, ICSE 2004, IEEE Internation Conf. pp. 143-147, Dec. 2004.
  2. H. H. Hsieh, "A compact quadrature hybrid MMIC using CMOS active inductors", IEEE Trans. on Microwave Theory and Techniques, vol. 99, pp. 1-7, 2007.
  3. S. Seo, N. Ryu, H. Choi, and Y. Jeong, "Novel high-Q inductor using active inductor structure and feedback parallel resonance circuit", in Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, pp. 467-470, 2007.
  4. K. Hwang, C. Cho, J. Lee, and J. Kim, "High qualityfactor and inductance of symmetric differential-pair structure active inductor using a feedback resistance design", in IEEE International Microwave Symposium Digest, pp. 1059-1062, 2008.
  5. Q. Lai, J. Mao, "A new floating active inductor using resistive feedback technique", in IEEE International Microwave Symposium Digest, pp. 1748-1751, 2010.
  6. R. Mukhopadhyay, S. W. Yoon, Y. Park, C. -H. Lee, S. Nuttinck, and J. Laskar, "Investigation of inductors for digital Si-CMOS technologies", IEEE Int. Symp. Circuits and System(ISCAS), pp. 3750-3753, May 2006.
  7. H. Feng, K. Mouthaan, "Lossless CMOS active reciprocal two-port inductor and application in a series LC filter", in Proceedings of European Microw. Conf., pp. 364-367, 2012.