• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.4
• /
• pp.435-442
• /
• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.129-133
• /
• 2001

In this paper, hermetic sealing was studied fur wafer level packaging of the MEMS devices. With the flip-chip bonding method, this B-stage epoxy sealing will be profit to MEMS device sealing and further more RF-MEMS device sealing. B-stage epoxy can be cured 2-step and hermetic sealing can be obtained. After defining $500{\mu}{\textrm}{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was then aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line were maintained during the sealing process. The height of the seal-line was controlled within $\pm0.6${\mu}{\textrm}{m}$ and the strength was measured to about 20MPa by pull test. The leak rate of the epoxy was about $10^7$ cc/sec from the leak test.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.4
• /
• pp.11-15
• /
• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Journal of the Korean Ceramic Society
• /
• v.26 no.6
• /
• pp.829-835
• /
• 1989

Devitrifing solder glasses in a specific group of glass ceramic materials are extensively used in hermetically sealing alumina electronics packages. Preferred frit glass compositions of this study consist of 37~40wt% PbO, 35~40wt% ZnO, 18~20wt% B2O3, 1~3wt% SiO2, 0~6wt% TiO2. The coated frit glasses crystallize during firing and form a strong hermetic seal. DTA and X-ray diffraction were used to characterize crystallization of the glass frit. Frit seal containing 2wt% TiO2 has crystallization temperature of 550~57$0^{\circ}C$ with surface nucleation. Frit seal containing 6wt% TiO2 has crystallization temperature of 515~5$25^{\circ}C$ with bulk nucleation, and the main crystalline phase was perovskite lead titanate having minus expansion coefficient. The average activation energy for the crystallization calculated from Ozawa equation was 65$\pm$10kcal/mol.

• Journal of the Korean Vacuum Society
• /
• v.21 no.1
• /
• pp.1-5
• /
• 2012

The measurement device of internal pressures of small components sealed hermetically was developed. The internal pressure of a sample measured with this device was 43.151 kPa, and the expanded uncertainty ($\kappa$=2) was 741 Pa. The resultant measurement ability of internal pressures in small vacuum components, which had been almost impossible previously, shows the possibility of internal vacuum detection of hermetically sealed parts.

• Journal of Information Display
• /
• v.3 no.1
• /
• pp.11-16
• /
• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• Journal of Sensor Science and Technology
• /
• v.15 no.1
• /
• pp.58-64
• /
• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

• The Journal of the Korean dental association
• /
• v.56 no.10
• /
• pp.567-571
• /
• 2018

Obturation is a important procedure of root canal treatment. Canal filling should be both provide a hermetic seal for the root canal system and eliminate leakage channel from the oral cavity. Gutta-percha have been the standard material of choice for root canal obturation. Canal filling has been aimed at maximizing the amount of gutta-percha and minimizing the amount of sealer. However recently, single cone technique has been introduced that include calcium silicate-based sealer and single gutta-percha cone. It is important to select an obturation technique that offers consistency and is easy to use. From the standpoint of appropriate technology, the single cone technique is thought to be useful for general dentist.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.2
• /
• pp.109-114
• /
• 2015

We realize a color reflective display without any color filter and sub-pixelation concept, by which the full or single color realization is basically impossible. In this study, we use a 3-electrode on the lower substrate with indium tin oxide (ITO) glass. The width of a rib is $30{\mu}m$, a cell size is $150{\mu}m{\times}150{\mu}m$, and the space of lower electrodes is $10{\mu}m$. To get the single color, we drive this panel by a identical algorithm based on the movement of charged particle in color fluid within a cell with hermetic seal. According to the driving method, the lifetime of panel is different.

• Nuclear Engineering and Technology
• /
• v.48 no.4
• /
• pp.1009-1014
• /
• 2016

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.