• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.318-331
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• 1995

The c - axis oriented single crystal of $LiNbO_3$ and $LiNbO_3$ : 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of $LiNbO_3$ with those of the other optical materials, the nonlinear optical refractive index ($n_2$) was calcu l lated using the measured refractive index.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.10-10
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• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• Journal of the Korean Society of Marine Environment & Safety
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• v.18 no.5
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• pp.468-474
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• 2012

In this study, experimental studies were performed for the carbon nanomaterial(CNM) which is catching on as a material for eco-ship. The opposed-flow methane flame was used as a heat source for synthesis of CNM. Ferrocene was used as a catalyst for the synthesis of CNM. These major parameters were $H_2$ mixing rate and sampling positions that synthesize CNMs in opposed-flow diffusion flames. The propensities of CNMs were experimentally determined using SEM and TEM images. The experimental result showed that the amount of CNTs was increased with increasing $H_2$ concentration. It can also be found that the optimal temperature in opposed-flow methane flame for synthesis of CNT was about 1500 K.

• Journal of the Korean Solar Energy Society
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• v.37 no.2
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• pp.77-85
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• 2017

Thin crystalline silicon (C-Si) solar cell is expected to be a low price energy source by decreasing the consumption of Si. However, thin c-Si solar cell entails the bowing and crack issues in high temperature manufacturing process. Thus, the conventional tabbing process, based on high temperature soldering (> $250^{\circ}C$), has difficulties for applying to thin c-Si solar cell modules. In this paper, a conductive paste (CP) based interconnection process has been proposed to fabricate thin c-Si solar cell modules with high production yield, instead of existing soldering materials. To optimize the process condition for CP based interconnection, we compared the performance and stability of modules fabricated under various lamination temperature (120, 150, and $175^{\circ}C$). The power from CP based module is similar to that with conventional tabbing process, as modules are fabricated. However, the output of CP based module laminated at $120^{\circ}C$ decreases significantly (14.1% for Damp heat and 6.1% for thermal cycle) in harsh condition, while the output drops only in 3% in the samples process at $150^{\circ}C$, $175^{\circ}C$. The peel test indicates that the unstable performance of sample laminated at $120^{\circ}C$ is attributed to weak adhesion strength (1.7 N) between cell and ribbon compared to other cases (2.7 N). As a result, optimized lamination temperature for CP based module process is $150^{\circ}C$, considering stability and energy consumption during the fabrication.

• Nuclear Engineering and Technology
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• v.8 no.2
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• pp.89-99
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• 1976

The grafting of acrylic acid in aqueous solution to polyvinyl chloride fibers tab been studied in the presence of ferrous, ferric, and cupric salts, The mutual irradiation technique was adopted using a Co-60 source or a Van do Graaff accelerator. The grafting and homopolymerization were suppressed by the cations. Particularly the grafting was suppressed by the cations in the following order of effectiveness : $Cu^{2+}$>$Fe^{2+}$>$Cu^{3+}$. The rate of grafting (in %/hr) was proportional to the 0.76th power of the dose rate over the range from 8.5f $10^3$ rad/hr to $1.4\times10^5$ rad/dr. The apparent activation energy for the grafting was determined to be 6.1 Kcal/mole between $25^{\circ}$ and $75^{\circ}C$ for the mixture of AA-HaO-$(CH_2Cl)_2$, containing Mohr's salt, $4\times10^{-3}$ mole/l. The increase of the grafting was observed when total dose and dose intensity were raised, or when ethylene dichloride as a swelling agent was saturated in the monomer mixture. The grafted polyvinyl chloride fibers showed considerable improvement in moisture regain, heat shrinkage, and melting properties, but tensile properties were not significantly affected by grafting.

• Journal of Energy Engineering
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• v.19 no.1
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• pp.8-15
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• 2010

As environmental friendly energy system, distributed micro gasturbine is focused on new energy source for overcoming brand new construction area of power generation. This distributed micro gasturbine system has the powerful characteristics as belows; 1) environmental friendly features NOx < 9 ppm, noise < 65 db 2) various fuel flexbility which is used such as natural gas, diesel, low calory new & renewable fuel, kerosene. 3) high specific output power based on small area and is avilable for very easy and compact installation. There are many new installation sites in USA and Japan from 1998. On the other hand the exhisting large power system was constructued by the sea side, this compact power system is now installed by enduser in downtown area and supplying combined heat & power, has the various apllication on-site power generation. In recently, there is the very important issue for new & reliablbe energy development and spreading out. This paper represent as belows for important system characteristics; 1) grid connection modeling 2) system operation characteristics 3) on-site operation result and evaluation output of power quality analysis.

• Journal of Science Education
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• v.32 no.2
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• pp.121-145
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• 2008

The purposes of this study were to identify the misconceptions that students have on the magma and plate tectonics and to present the implications in developing textbooks as well as related curriculum of high school textbooks. Data were collected through questionnaire, consisting of some questions, short essays, and descriptive drawings, developed by the research team. A total of 140 high school students(9th graders) responded to those questionnaires and were interviewed for further information. It was reported that participants displayed various misconceptions related to magma and plate tectonics. The identified misconceptions are as follows: For the definition of magma, the 31% of participants misunderstood magma as lava. In respect to the generative mechanism of magma at subduction zone, over 90% of students responded that it is generated by frictional heat. The source of misconceptions were identified as a result from textbooks and related reference-books. For the concept of plates, 87% of students conceived 'crust or a lower part of the plates' as 'plates'. Most participants hold the right concept of oceanic ridge, whereas, 66% of them considered 'rift valley' as either 'divergence of continental plates' or 'converging boundary'. 63% of them defined 'collision boundary of continental plate' as either 'subduction zone' or 'diverging boundary'. For the definitions of the trench and Benioff zone, 86% of students responded them as the place of subduction or differing density between two converging plates. The students' misconceptions were resulted from the errors and insufficient explanation, inappropriate figures, and data presented in textbooks, reference-books, lecture, and web sites. The results of this study are implied to contribute the improvement of students' misconceptions.