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Growth and effect of thermal annealing for $AgGaSe_2$ single crystal thin film by hot wall epitaxy  

Baek, Seung-Nam (Department of Metal Material Engineering, Chosun University)
Hong, Kwang-Joon (Department of Metal Material Engineering, Chosun University)
Kim, Jang-Bok (Department of Physics, Chosun University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.16, no.5, 2006 , pp. 189-197 More about this Journal
Abstract
A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.
Keywords
Point defect; Hot wall epitaxy; Single crystal thin film; Thermal annealing; Photoluminescence;
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  • Reference
1 P. Migliorato, J.L. Shay and H.M. Kasper, 'Heterojunction formation in PbS/$AgGaSe_{2}$ ternary solar cells', J. EIec. Mate. 4 (1975) 209
2 L.L. Kazmerski, P.J. Ireland, F.R. White and R.B. Cooper, 13th. IEEE Photovoltaic Specialistic Conf. Record (IEEE, Princeton 1978) p. 184
3 W Jantz and P. Koidi, 'Optical absorption of Co-doped $AgGaSe_{2}$' , Appl. Phys. Lett. 31 (1977) 99   DOI
4 B. Tell and H.M. Kasper, 'The optical properties of $AgGaS_{2}$ crystal grown by the sublimation method', Phys. Rev. B6 (1972) 3008
5 Elizabeth A. wood, Crystal Orientation manual, Columbia university press (1963)
6 D.G Boy, H.M. Kasper and J.H. McFee, 'Luminescence and impurity states in $AgGaS_{2}$' , J. Quantum Electro QE7 (1971) 563
7 H.A. Chedzey, DJ. Marshall, HJ. Pakfitt and D.S. Robertson, 'The band structure of $AgGaSe_{2}$ calculated by the pseudopotential method', J. Appl. Phys. 4 (1971) 1320
8 A. Smith, 'Growth by directional freezing of $AgGaSe_{2}$ and diffused homojunctions in bulk material', J. Vac. Sc. Technol. 15 (1987) 353
9 VP. Varshni, 'Far-infrared optical absorption of $Fe^{2+}$ in ZnSe', Physica 34 (1967) 149   DOI   ScienceOn
10 B. Tell and H.M. Kasper, 'Influence of the annealing conductions on the properties of $AgGaSe_{2}$ thin films', Phys. B4 (1971) 4455
11 S. Wagner, J.L. Shay, P. Migliorato and H.M. Kasper, 'Study of the band edge in $AgGaSe_{2}$ by photovoltaic effect', Appl. Phys. Lett. 25 (1974) 434   DOI
12 KJ. Hong, S.H. You, T.S. Jeong and CJ. Youn, 'Point defect study from low photoluminescience of the $Cdln_{2}S_{4}$ films grown by hot wall epitaxy method', J. Crystal. Growth 271 (2004) 391   DOI   ScienceOn
13 B.D. Cullity, Elements of X-ray Diffractions (AddsonWelsey, 1985) Chap. 11
14 H. Fujita, 'Electron radition damage in cadium-selenide crystal at liquid-helium temperrature', J. Phys. Soc. Jpn. 20 (1965) 109   DOI
15 PW Han and R. Viehman, 'The optical properties of $AgGaSe_{2}$ thin films', J. Appl. Phys. 45 (1974) 825
16 P. Korczak and C.B. Staff, 'The optical properties of $AgGaSe_{2}$ single crystal', J. Crystal Growth 24 125 (1974) 386   DOI   ScienceOn
17 D.C. Hanna, VV Rampel and R.C. Smith, 'Saturation Photoconductivity in $AgGaSe_{2}$' , Opt. Commun. 8 (1973) 151   DOI   ScienceOn
18 I. Shih, A. Vahid Shahidi and C.H. Champness, 'Transport properties of $AgGaSe_{2}$ single crystal', J. Appl. Phys. 56 (1984) 421   DOI   ScienceOn
19 I.W.F. Russel, B.N. Baronand and R.E. Rocheleau, 'Photoluminescience and phconductivity measurements on $AgGaSe_{2}$' , J. Vac. Sci. Technol. B2(4) (1984) 840