• 한국식생활문화학회지
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• 제31권4호
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• pp.300-324
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• 2016

This paper investigated monthly meal composition and type of foods prepared for Dalye (ancestor rituals) over a period of 1 year based on the records in Sakmangdalye-deungnok and reviewed the ingredients for Dalye foods. From the results of our survey, 19 to 20 dishes were served in Sakmangdalye. 24 to 25 different foods were served in Sakdalye. Foods for Sakdalye consisted of Silkwa, Jogwa-Gwapyun, Jeongkwa or Suksilkwa, Hwachae-Sujeonggwa, Tteok, Cho, Jeonyueo, Sugyuk, Jjim, Hwe, Po, Sikhye, Tang, main dish-Guksu or Mandu, and Jang. Ingredients used in Sakmangdalye were recorded in a very integrated and simple manner in Sakmangdalye-deungnok. All ingredients were categorized into three groups: Kwasil (Fruits), Byeongmisikseung (Rice cakes etc.), and Muyeok (purchases). Sakmangdalye-deungnok was helpful in consulting dishes and ordering ingredients when a table for Dalye was set. Moreover, it was written simply enough so those who were in charge of preparing food could easily understand. This paper establishes Sakmangdalye-deungnok as one of the key materials for Royal Cuisine.

• 한국항공우주학회지
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• 제32권9호
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• pp.49-56
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• 2004

복합재료가 항공기 구조물 및 기계부품 등에 폭 넓게 적용됨에 따라, 복합재료 구조물에서 가장 취약한 복합재료 체결부의 설계는 매우 중요한 연구분야로 대두되고 있다. 본 논문에서는 복합재료의 기계적 체결부를 마찰이 없는 강체 핀으로 단순화한 선형 유한요소해석을 수행하여 파괴면적지수법으로 복합재료 체결부의 강도를 예측하였다. 파괴면적 지수법을 이용하여 형상, 원공의 크기 및 적층순서가 다른 기계적 체결구조를 갖는 복합 재료의 체결부의 강도를 예측한 결과, 12.2% 내에서 체결부의 강도를 예측할 수 있었다.

• 가정∙방문간호학회지
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• 제16권2호
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• pp.145-152
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• 2009

Purpose: To identify the relationship of job stress with job satisfaction and organizational commitment of nurses. Method: The subjects were 288 nurses working in two hospitals in Kyong Ki Island. The study was conducted from August to October 2007. The data was collected by questionnaires and were analyzed using descriptive statistics and Pearson correlation coefficients. Results: The mean score of job stress was $2.86{\pm}.75$ (total of 4 points), mean score job satisfaction score was $2.98{\pm}.33$ (total of 5 points), and mean organizational commitment score was $3.14{\pm}.34$ (total of 5 points). Concerning sub factors, limited medical care was highest and conflicts with the doctors was lowest. The level of job stress was significantly different according to age, marital status, religion, educational status, and type of employment. The level of job satisfaction was significantly different according to type of employment and working style. Job stress and job satisfaction were significantly correlated. Conclusion: It may be necessary further to develop job stress management programs to productively address job stress of nurses.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• Journal of the Optical Society of Korea
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• 제13권4호
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• pp.434-438
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• 2009

In this paper, a 12.5-Gb/s optical transmitter is implemented using 0.13-${\mu}m$ CMOS technology. The optical transmitter that we constructed compensates temperature effects of VCSEL (Vertical cavity surface emitting laser) using auto-power control (APC) and auto-modulation control (AMC). An external monitoring photodiode (MPD) detects optical power and modulation. The proposed APC and AMC demonstrate 5$\sim$20-mA of bias-current control and 5$\sim$20-mA of modulation-current control, respectively. To enhance the bandwidth of the optical transmitter, an active feedback amplifier with negative capacitance compensation is exploited. The whole chip consumes only 140.4-mW of DC power at a single 1.8-V supply under the maximum modulation and bias currents, and occupies the area of 1280-${\mu}m$ by 330-${\mu}m$ excluding bonding pads.

• Nuclear Engineering and Technology
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• 제40권7호
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• pp.539-550
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• 2008

Lung cancer is the most prevalent global cancer, ${\sim}90%$ of which is caused by cigarette smoking. The LNT hypothesis has been inappropriately applied to estimate lung cancer risk due to ionizing radiation. A threshold of ${\sim}1\;Gy$ for lung cancer has been observed in never smokers. Lung cancer risk among nuclear workers, radiologists and diagnostically exposed patients was typically reduced by ${\sim}40%$ following exposure to <100 mSv low LET radiation. The consistency and magnitude of reduced lung cancer in nuclear workers and occurrence of reduced lung cancer in exposed non-worker populations could not be explained by the HWE. Ecologic studies of indoor radon showed highly significant reductions in lung cancer risk. A similar reduction in lung cancer was seen in a recent well designed case-control study of indoor radon, indicating that exposure to radon at the EPA action level is associated with a decrease of ${\sim}60%$ in lung cancer. A cumulative whole-body dose of ${\sim}1\;Gy$ gamma rays is associated with a marked decrease in smoking-induced lung cancer in plutonium workers. Low dose, low LET radiation appears to increase apoptosis mediated removal of $\alpha$-particle and cigarette smoke transformed pulmonary cells before they can develop into lung cancer.

• 통합자연과학논문집
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• 제3권1호
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.81-85
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• 2009

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.25-26
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• 2008

Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and $450^{\circ}C$ in rapid thermal annealing, and those specific contact resistance investigated by using transmission line method. According to experimental results, the specific contact resistance between p-metal and GaAs was decreased as the V/III ratio was lower. These results indicate that Si doping concentration of GaAs increased as the vacancy of V-series of GaAs was high.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.415-416
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• 2008

The finite element model was used to simulate the temperature distribution of a arrayed vertical-cavity surface-emitting laser (VCSEL). In this work, the dimension of AlGaAs/GaAs based VCSEL array was $50{\mu}m$ active diameter and $250{\mu}m$ pitch, and AuSn solder of 80wt%Au-20wt%Sn was included to flip-chip bond. The results of the thermal simulation will be applied to predict the thermal cross-talk in high speed parallel optical interconnects.