Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
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Study on Electrical Properties and Temperature Dependence of Energy Band Gap for $ZnIn_2Se_4$ Single Crystal Thin Film Grown by Hot Wall Epitaxy

뜨겨운 곁쌓기법에 의해 성장된 $ZnIn_2Se_4$ 단결정 박막의 전기적 특성과 에너지 갭의 온도 의존성

  • Received : 2010.03.09
  • Accepted : 2010.03.20
  • Published : 2010.03.31
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Abstract

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

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References

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