• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.302-310
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• 2008

This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1606-1608
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• 2002

The triac is a bidirectional triode with blocking and conducting characteristics used in motor control or heater power control. This greatly simplifies the circuits required for the control of the full wave AC Power by reducing the number of power handling components and by reducing the size and complexity of the gate control circuit.[3] In this paper, We can understand measurement results of analysis which have been made on the electrical characteristics of triac with gate diffusion time for the gate area.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.149-153
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• 2002

Flux-gate magnetometer has been still used for low field magnetic field measurement with portability, low power consumption, and high reliability. In many applications, flux-gate magnetometer measures not absolute values but changes of the earth magnetic field. For the eia magnetic field change measurements, we have constructed a high sensitive 3-axis flux-gate magnetometer of which measuring ranges is ${\pm}$1000 nT and noise level is 5pT/√㎐ at 1 ㎐. Using this magnetometer, we can compensate the earth magnetic field of ${\pm}$50,000 nT with successive approximation methods using microcomputer. After earth magnetic field compensation, we could measure earth magnetic field changes with ${\pm}$100 nT measuring ranges.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.255-256
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• 2006

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.486-489
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• 1987

For longterm conservation of the $Si_3N_4$ gate pH-ISFET, characteristics of ISFET surface treatment with HF and surface coating with paraffin wax were investigated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2012.06a
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• pp.314-316
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• 2012

울산 현대중공업 해양2공장 H-Dock에서 건조중인 Goliath FPSO의 원활한 입출거를 위하여 기존의 폭 90m인 Dock Gate를 115m로 확장하고, Gate 북측의 기존안벽을 25m 철거하여 신설안벽을 축조하고 있다. 이 연구에서는 H-Dock 전면수역을 이용하는 선박의 통항 안전성을 검증하고, 해상교통현황 조사, 해상교통현황 측정, 해상 이용자 및 전문가 의견수렴을 거쳐 울산항 제1항로를 횡단하여 현대중공업을 입출하는 선박 Block 운반 예부선들의 교통흐름에 미치는 영향을 분석하고, 신설안벽의 전면수역인 M정박지에 입출하는 선박들의 통항안전을 확보하기 위한 종합적인 안전대책을 제시한다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.