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http://dx.doi.org/10.5573/JSTS.2008.8.4.302

Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET's  

Omura, Yasuhisa (ORDIST, Graduate School of Sci. & Eng, Kansai University)
Konishi, Hideki (ORDIST, Graduate School of Sci. & Eng, Kansai University)
Yoshimoto, Kazuhisa (ORDIST, Graduate School of Sci. & Eng, Kansai University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.4, 2008 , pp. 302-310 More about this Journal
Abstract
This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.
Keywords
Aspect ratio; FinFET; triple-gate FET; short- channel effects; drivability; subthreshold swing; DIBL; 3-D device simulations;
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