한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.145-148
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- 2007
4.1” Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-IGZO Thin-film Transistors
- Jeong, J.K. (Corporate R&D Center, Samsung SDI Co.) ;
- Kim, M. (Corporate R&D Center, Samsung SDI Co.) ;
- Jeong, J.H. (Corporate R&D Center, Samsung SDI Co.) ;
- Lee, H.J. (Corporate R&D Center, Samsung SDI Co.) ;
- Ahn, T.K. (Corporate R&D Center, Samsung SDI Co.) ;
- Shin, H.S. (Corporate R&D Center, Samsung SDI Co.) ;
- Kang, K.Y. (Corporate R&D Center, Samsung SDI Co.) ;
- Park, J.S. (Corporate R&D Center, Samsung SDI Co.) ;
- Yang, H, (Corporate R&D Center, Samsung SDI Co.) ;
- Chung, H.J. (Corporate R&D Center, Samsung SDI Co.) ;
- Mo, Y.G. (Corporate R&D Center, Samsung SDI Co.) ;
- Kim, H.D. (Corporate R&D Center, Samsung SDI Co.) ;
- Seo, H. (Corporate R&D Center, Samsung SDI Co.)
- Published : 2007.08.27
Abstract
The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness