• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1430-1431
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• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1058-1061
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• 2003

In this thesis, we observed the optical characteristic of amorphous chalcogenide thin films by He-Cd laser. Also, grating formation by He-Ne laser and He-Cd laser. After analyze diffraction efficiency of the time on the $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin films. The result diffraction efficiency of Maximun 0.2% reduced according to time grating formation by He-Ne laser. Diffraction efficiency of Maximun 0.1% showed stabiliy characteristic according to time grating formation by He-Cd laser.

• 한국광학회지
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• 제5권4호
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• pp.487-492
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• 1994

The two-photon bleaching model is generalized to derive the dynamical equations which describe the polarization grating formation induced by the photosensitivity in birefringent optical fibers. The frequency response of the induced polarization grating is studied numerically and its relation to the material parameter is investigated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• 한국광학회지
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• 제4권4호
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• pp.464-473
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• 1993

본 논문에서는 광섬유에 아르곤 레이저 빔이 입사될 때 생기는 위상격자 형성에 관한 역학을 다룬다. 간단한 쌍광자 표백모델(two-photon bleaching model)을 이용하여 위상격자가 시간이 지남에 따라 이상적인(ideal) 격자로 자기조직됨(self-organized)을 보인다. 광섬유의 각점에서의 시간에 따른 상태전개는 하나의 보편 매개변수(universial parameter)에 의해 나타내어지고 또한 이 광섬유계를 기술하는 연립편미분 방정식이 이 매개변수에 의해 연립 상 미분 방정식으로 간소화 된다. 이 연립 상 미분 방정식을 이용하여 위상격자가 자라나는 상태는 한 고정점(a fixed point)를 향해 가는 과정이고 이 고정점은 완벽히 위상맞춤(phase-matched)된 격자에 해당된다는 것을 보인다.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.736-739
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• 2003

We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.91-94
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• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1428-1429
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• 2006

We investigated the diffraction efficiency, erasing property and rewriting property of diffraction grating with each wavelength of recording beam. A (P:P) polarized light was exposed on AsGeSeS and Ag/AsGeSeS thin film to form a diffraction grating by HeNe(635nm) laser and DPSS(532nm) laser. At the maximum efficiency condition, unpolarized HeNe laser beam was irradiated to erase 1ha generated diffraction grating. The HeNe laser showed more higher diffraction efficiency and the DPSS laser showed more faster diffraction grating time. At erasing and rewriting process, AsGeSeS(61%-85%)thin film showed better property than Ag doped Ag/AsGeSeS(53%-63%) double layer structured thin film.