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http://dx.doi.org/10.4313/JKEM.2003.16.8.736

Annealing Effect of the Chalcogenide Thin Film for Holographic Grating Formation  

Park, Jung-Il (광운대학교 전자재료공학과)
Shin, Kyung (광운대학교 전자재료공학과)
Lee, Jung-Tae (광운대학교 전자재료공학과)
Lee, Young-Jong (여주대학 전자과)
Chung, Hong-Bay (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.8, 2003 , pp. 736-739 More about this Journal
Abstract
We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times
Keywords
Photoinduced; Photoexpansion; Holographic-grating; Diffraction efficiency; Annealing;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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